Germanium segregation in CVD grown SiGe layers

• Authors: Andrei Novikau , Peter Gaiduk
• Languages of publication: EN

Abstracts

EN

A 2D layer of spherical, crystalline Ge nanodots embedded in a SiO2 layer was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and Rutherford back scattering spectrometry, as well as electrically by measuring C-V and I-V characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots were situated in the SiO2 at the average distance 5–6 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge-nanodot layer was demonstrated by the hysteresis behavior of the high-frequency C-V curves.

Keywords

EN

SiGe oxidation; Ge nanocluster; floating gate; MOS capacitor

Discipline

• 64.75.Lm: Phase separation and segregation in oxidation(for general surface oxidation studies in surface treatments, see 81.65.Mq)
• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 81.07.Bc: Nanocrystalline materials

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2010
• Volume: 8
• Issue: 1
• Pages: 57-60

Dates

published

1 - 2 - 2010

online

15 - 11 - 2009

Contributors

author

Andrei Novikau

• Belarusian State University, prosp. Nezavisimosti, 4, 220030, Minsk, Belarus

author

Peter Gaiduk

• Belarusian State University, prosp. Nezavisimosti, 4, 220030, Minsk, Belarus

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Identifiers

DOI

10.2478/s11534-009-0082-0