Valence intersubband gain without population inversion

• Authors: Mauro Pereira
• Languages of publication: EN

Abstracts

EN

Terahertz gain without population inversion is studied in thin III–V semiconductor quantum wells. Nonequilibrium hole populations leading to intervalence gain in the transverse electric mode are investigated. The results are obtained with a Keldysh Nonequilibrium Green’s Functions approach that takes into account bandstructure, manybody and nonequilibrium effects.

Keywords

EN

intersubband transitions; coupled valence bands; lasing without inversion; THz intersubband lasers

Discipline

• 71.10.-w: Theories and models of many-electron systems
• 71.22.+i: Electronic structure of liquid metals and semiconductors and their alloys
• 78.67.-n: Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures(for magnetic properties of nanostructures, see 75.75.-c; for electronic transport in nanoscale structures, see 73.63.-b; for mechanical properties of nanoscale systems, see 62.25.-g)
• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2010
• Volume: 8
• Issue: 1
• Pages: 61-64

Dates

published

1 - 2 - 2010

online

15 - 11 - 2009

Contributors

author

Mauro Pereira

• Materials and Engineering Research Institute, Sheffield Hallam University, Howard Street, S1 1WB, Sheffield, UK

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Identifiers

DOI

10.2478/s11534-009-0061-5