Interface resistive switching effects in bulk manganites

• Authors: Mikhail Belogolovskii
• Languages of publication: EN

Abstracts

EN

A physical mechanism driving the resistance switching in heterocontacts, formed by a metal counterelectrode and electrically conducting bulk perovskite manganites, is discussed. The nature of the inelastic, charge-hopping transport inside insulating and strongly inhomogeneous metal/manganite interfaces is studied theoretically. Comparison with measured current-voltage characteristics for a La0.67Ca0.33MnO3/Ag heterostructure in a high-resistance state reveals the presence of one or more charge traps along a conduction path within the interface. In a low-resistance state the main charge-transferring events are direct tunneling ones. The analysis of electrical noise measurements for a La0.82Ca0.18MnO3 single crystal in three different charge-transport regimes shows scattering centers with a broad, flat spectrum of excitation states, independent of manganite electrical and/or magnetic characteristics. All of these results are consistent with an oxygen-drift model for a bistable resistance state in perovskites.

Keywords

EN

doped manganites; resistive switching; interface structures; charge transport; oxygen vacancies

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 73.40.-c: Electronic transport in interface structures
• 73.40.Ns: Metal-nonmetal contacts
• 75.47.Lx: Magnetic oxides

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 2
• Pages: 304-309

Dates

published

1 - 6 - 2009

online

26 - 4 - 2009

Contributors

author

Mikhail Belogolovskii

• Donetsk Physical and Technical Institute, National Academy of Sciences of Ukraine, Donetsk, 83114, Ukraine

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Identifiers

DOI

10.2478/s11534-009-0012-1