STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 Ã- √19) substrate

• Authors: Maciej Cegiel , Maciej Bazarnik , Ryszard Czajka
• Languages of publication: EN

Abstracts

EN

Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 Ã- √19) substrates via Co evaporation and post deposition annealing. This (√19 Ã- √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã-7) reconstruction occurred at the cost of Si(111)-(√19 Ã- √19).

Keywords

EN

silicides; STM/STS; Si(111); cobalt; growth

Discipline

• 61.46.Bc: Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)(see also 61.48.-c for structure of fullerenes)
• 68.35.bg: Semiconductors
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)
• 73.22.-f: Electronic structure of nanoscale materials and related systems
• 81.07.Bc: Nanocrystalline materials

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 2
• Pages: 291-294

Dates

published

1 - 6 - 2009

online

26 - 4 - 2009

Contributors

author

Maciej Cegiel

• Institute of Physics, Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13A, 60-965, Poznan, Poland

author

Maciej Bazarnik

• Institute of Physics, Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13A, 60-965, Poznan, Poland

author

Ryszard Czajka

• Institute of Physics, Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13A, 60-965, Poznan, Poland

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Identifiers

DOI

10.2478/s11534-008-0141-y