XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

• Authors: Bao Man , Hong Xi , Chuan Chen , Mei Liu , Jing Wei
• Languages of publication: EN

Abstracts

EN

Using a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N2. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.

Keywords

EN

PLD; ZnO films; deposition temperature; laser energy; anneal; lens position

Discipline

• 81.05.-t: Specific materials: fabrication, treatment, testing, and analysis(for superconducting materials, see 74.70.-b, and 74.72.-h; for magnetic materials, see 75.50.-y; for optical materials, see 42.70.-a; for dielectric materials, see 77.84.-s; for disperse systems and complex fluids, see 82.70.-y; see also 82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids; for materials properties, see sections 60 and 70)
• 42.70.-a: Optical materials(see also 81.05.-t Specific materials: fabrication, treatment, testing and analysis)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 3
• Pages: 643-647

Dates

published

1 - 9 - 2008

online

17 - 7 - 2008

Contributors

author

Bao Man

• College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China

author

Hong Xi

• College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China

author

Chuan Chen

• College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China

author

Mei Liu

• College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China

author

Jing Wei

• College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China

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Identifiers

DOI

10.2478/s11534-008-0062-9