Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

• Authors: Limin Zhang , Xiaodong Zhang , Wei You , Zhen Yang , WenXiu Wang , Qing Ge , Zhengmin Liu
• Languages of publication: EN

Abstracts

EN

The effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I
YL/I
NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

Keywords

EN

gallium nitride (GaN); photoluminescence spectra; ion implantation

Discipline

• 78.66.Fd: III-V semiconductors
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 85.40.Ry: Impurity doping, diffusion and ion implantation technology
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 2
• Pages: 283-288

Dates

published

1 - 6 - 2008

online

26 - 3 - 2008

Contributors

author

Limin Zhang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

author

Xiaodong Zhang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

author

Wei You

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

author

Zhen Yang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

author

WenXiu Wang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

author

Qing Ge

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

author

Zhengmin Liu

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

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Identifiers

DOI

10.2478/s11534-008-0013-5