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Journal

2006 | 4 | 2 | 187-195

Article title

Influence of ion bombardment on the photoluminescence response of embedded CdS nanoparticles

Content

Title variants

Languages of publication

EN

Abstracts

EN
Semiconductor nanoparticles (CdS) were fabricated by an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. Nano-CdS in PVA were subjected to ion irradiation (using oxygen, chlorine and gold) in the medium energy range (80–100 MeV) and under fluence variation of 1011–1013 ions/cm2. The nature of light emission was found to be drastically different in each of the three cases. Photoluminescence spectra of oxygen irradiated samples exhibit band edge emission (2.8 eV) as well as trap related emission (1.76 eV) whereas band edge emission is found to be bleached out for chlorine ion irradiated nano-CdS. The intense broad PL peaks, noticeable in the case of gold ion irradiated samples suggest superposition of the two peaks - namely, band edge emission and trap related emission. Furthermore, in the case of gold ion irradiated nano-CdS, energy shift in the PL spectra reveals variation in size distribution caused by the extra pressure effect of heavy gold ion beams. The mechanism of such a difference as a result of ion irradiation-type and ion-fluence is discussed in detail.

Publisher

Journal

Year

Volume

4

Issue

2

Pages

187-195

Physical description

Dates

published
1 - 6 - 2006
online
1 - 6 - 2006

Contributors

  • Department of Physics, Tezpur University, P.O. Napaam, Assam, 784 028, India
author
  • Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.Box. 10502, New Delhi, 110 067, India
author
  • Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.Box. 10502, New Delhi, 110 067, India
  • Department of Physics, Tezpur University, P.O. Napaam, Assam, 784 028, India

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-006-0006-1
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