Sputtered n-type Bi2Te3 / (Bi,Sb)2Te3 superlattice
systems

• Authors: M. Winkler , X. Liu , A.-L. Hansen , J. D. König , W. Bensch , L. Kienle , H. Böttner , K. Bartholomé
• Languages of publication: EN

Abstracts

EN

Bi2Te3, (Bi1−xSbx )2Te3 and layered Bi2Te3/(Bi1−xSbx)2Te3 superlattices fabricated by nanoalloying. Our approach is
based on the sequential sputtering of nanoscale layers of
the elements and subsequent annealing in order to induce
a solid state reaction. While conventionally Bi2(SexTe1−x )3 compounds are used as n-type V2VI3 material system, the deposition
of Se proves to be problematic especially for sputtering
deposition and is therefore replaced by (Bi1−xSbx )2Te3. A
superlattice consisting of 25 nm Bi2Te3/25 nm (Bi0:9Sb0:1)2Te3 – ML (periodicity of 50 nm) was synthesized and annealed
at temperatures of 150, 200, 225, and 250°C. The layers are
slightly rough and polycrystalline, and the grain sizes increase
with increasing annealing temperature. The XRD analysis
shows a pronounced (00l) texture of the sputtered layers.
SIMS depth profiles reveal that the chemical separation into
layers is present, yet smeared out to some degree after annealing
at 200°C.
High Seebeck coefficients of up to ~−190 μV/K were
achieved. A high maximum power factor of 22 μW/cmK2 can be attained after annealing at 250 °C for 12 h. The superlattice
system Bi2Te3 / (Bi1−xSbx )2Te3 can compete with
Bi2Te3 / Bi2(SexTe1−x )3 in terms of electrical properties while
representing a good practical alternative for the sputter deposition
due to the substitution of problematic Se with Sb.
Cross-plane thermal conductivities are in the range of 0.55 to
0.6 W/mK. The thermal conductivity is generally reduced due
to the nanocrystallinity of the material, however, there seems
to be no measurable reduction of the thermal conductivity by
the superlattice-type 2D nanostructuring.

• Publisher: Versita
• Journal: Nanothermoelectrics
• Year: 2013
• Volume: 1
• Pages: 1-9

Dates

online

02 - 10 - 2013

accepted

17 - 08 - 2013

received

20 - 06 - 2013

Contributors

author

M. Winkler

• Fraunhofer Institute for Physical Measurement Techniques (IPM),
  Heidenhofstr. 8, D-79110 Freiburg, Germany

author

X. Liu

• Institute of Inorganic Chemistry, Christian-Albrechts-University
  Kiel, Max-Eyth-Str. 2, D-24118 Kiel, Germany

author

A.-L. Hansen

• Institute of Inorganic Chemistry, Christian-Albrechts-University
  Kiel, Max-Eyth-Str. 2, D-24118 Kiel, Germany

author

J. D. König

• Fraunhofer Institute for Physical Measurement Techniques (IPM),
  Heidenhofstr. 8, D-79110 Freiburg, Germany

author

W. Bensch

• Institute of Inorganic Chemistry, Christian-Albrechts-University
  Kiel, Max-Eyth-Str. 2, D-24118 Kiel, Germany

author

L. Kienle

• Institute for Materials Science, Christian-Albrechts-University Kiel,
  Kaiserstr. 2, D-24143 Kiel, Germany

author

H. Böttner

• Fraunhofer Institute for Physical Measurement Techniques (IPM),
  Heidenhofstr. 8, D-79110 Freiburg, Germany

author

K. Bartholomé

• Fraunhofer Institute for Physical Measurement Techniques (IPM),
  Heidenhofstr. 8, D-79110 Freiburg, Germany

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Identifiers

DOI

10.2478/nte-2013-0001