EN
Here we review commonly used techniques for
the production of large area and high quality graphene
to meet the requirements of industrial applications, including
epitaxial growth on SiC, chemical vapour deposition
(CVD) on transition metals and growth from solid carbon
source. The review makes a comparison of the growth
mechanisms, quality (such as mobility and homogeneity)
and properties of the resultant graphene, limitations and
the prospect of each production method. A particular focus
of the review is on direct (transfer free) growth on dielectric
substrate as this is potentially one of the promising
techniques for graphene production which can readily
be integrated into existing semiconductor fabrication processes.