Techniques for Production of Large Area Graphene
for Electronic and Sensor Device Applications

• Authors: Bing Li , Genhua Pan , Shakil A. Awan , Neil Avent
• Languages of publication: EN

Abstracts

EN

Here we review commonly used techniques for
the production of large area and high quality graphene
to meet the requirements of industrial applications, including
epitaxial growth on SiC, chemical vapour deposition
(CVD) on transition metals and growth from solid carbon
source. The review makes a comparison of the growth
mechanisms, quality (such as mobility and homogeneity)
and properties of the resultant graphene, limitations and
the prospect of each production method. A particular focus
of the review is on direct (transfer free) growth on dielectric
substrate as this is potentially one of the promising
techniques for graphene production which can readily
be integrated into existing semiconductor fabrication processes.

• Publisher: De Gruyter Open
• Journal: Graphene and 2D Materials
• Year: 2014
• Volume: 1
• Issue: 1

Dates

published

1 - 1 - 2014

online

12 - 11 - 2014

received

17 - 2 - 2014

accepted

2 - 10 - 2014

Contributors

author

Bing Li

• Wolfson Nanomaterials and Devices Laboratory,
  School of Computing and Mathematics, Faculty of Science
• Centre for Research in Translational Biomedicine, Plymouth
  University, Plymouth, Devon, PL4 8AA, UK

author

Genhua Pan

• Wolfson Nanomaterials and Devices Laboratory,
  School of Computing and Mathematics, Faculty of Science
• Centre for Research in Translational Biomedicine, Plymouth
  University, Plymouth, Devon, PL4 8AA, UK

author

Shakil A. Awan

• Centre for Research in Translational Biomedicine, Plymouth
  University, Plymouth, Devon, PL4 8AA, UK
• Cambridge Graphene Centre, Department of Engineering, University
  of Cambridge, CB3 0FA, UK

author

Neil Avent

• Centre for Research in Translational Biomedicine, Plymouth
  University, Plymouth, Devon, PL4 8AA, UK

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Identifiers

DOI

10.2478/gpe-2014-0003