Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

• Authors: Li Gao
• Languages of publication: EN

Abstracts

EN

Atomic scale investigations of the electronic properties of graphene are playing a crucial role in understanding and tuning the exotic properties of this material for its potential device applications. Scanning tunneling microscopy (STM) and spectroscopy (STS) are unique techniques for atomic scale investigations and have been extensively used in graphene research. In this article, we review recent progresses in STM and STS studies of the electronic properties of suspended graphene as well as graphene supported by different substrates including graphite, metals, silicon carbide, silicon dioxide and boron nitride.

Keywords

EN

Graphene; Scanning Tunneling Microscopy and Spectroscopy; Charge Transfer; Charge Carrier Density; Dirac Point; Landau Levels; Edges; Vacancies; Spin- Polarized States; Electron Scattering

• Publisher: De Gruyter Open
• Journal: Graphene and 2D Materials
• Year: 2014
• Volume: 1
• Issue: 1

Dates

published

1 - 1 - 2014

online

1 - 5 - 2014

received

20 - 1 - 2014

accepted

27 - 3 - 2014

Contributors

author

Li Gao

• Department of Physics and Astronomy, California State University, Northridge, California 91330, USA

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Identifiers

DOI

10.2478/gpe-2014-0002