Mechanism of Cu transport along clean Si surfaces

• Authors: A. Dolbak , R. Zhachuk , B. Olshanetsky
• Languages of publication: EN

Abstracts

EN

Cu diffusion along clean Si(111), (110) and (100) surfaces are investigated by Auger electron spectroscopy and low energy electron diffraction. The effective diffusion coefficients of copper are measured in the temperature range from 500 to 650°C. It is shown that the Cu transport along silicon surface occurs by the diffusion of Cu atoms through Si bulk and the segregation of Cu atoms to the surface during the diffusion process. It is found that the segregation coefficients of Cu to silicon surface during the diffusion process depend on surface orientation.

Keywords

EN

Surface; Silicon; Copper; Surface structure; Surface diffusion; Surface segregation; Low energy electron diffraction; Auger electron spectroscopy; 68.35.B; 68.35.F; 68.43.B

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2003
• Volume: 1
• Issue: 3
• Pages: 463-473

Dates

published

1 - 9 - 2003

online

1 - 9 - 2003

Contributors

author

A. Dolbak

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russian Federation

author

R. Zhachuk

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russian Federation

author

B. Olshanetsky

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russian Federation

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Identifiers

DOI

10.2478/BF02475857