Operation modes of the FALCON ion source as a part of the AMS cluster tool

• Authors: Oleksii Girka , Alexander Bizyukov , Ivan Bizyukov , Michael Gutkin , Sergei Mishin
• Languages of publication: EN

Abstracts

EN

The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defined range of operational frequencies. The paper focuses on the preparation of large wafers with SiO2 and AlN/Si3N4 depositions. Stability of the intermediate SiO2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed.

Keywords

EN

FALCON; ion sourcem; surface wave; cluster tool

• Publisher: De Gruyter Open
• Journal: Nukleonika
• Year: 2015
• Volume: 60
• Issue: 2
• Pages: 327-330

Dates

published

1 - 6 - 2015

received

19 - 5 - 2014

online

22 - 6 - 2015

accepted

5 - 5 - 2015

Contributors

author

Oleksii Girka

• V. N. Karazin Kharkiv National University, 4 Svobody Sq., 61022, Kharkiv, Ukraine

author

Alexander Bizyukov

• V. N. Karazin Kharkiv National University, 4 Svobody Sq., 61022, Kharkiv, Ukraine

author

Ivan Bizyukov

• V. N. Karazin Kharkiv National University, 4 Svobody Sq., 61022, Kharkiv, Ukraine

author

Michael Gutkin

• Micron Surface Technologies, 5033 Dantes View Drive, Calabasas, CA 91301, United States

author

Sergei Mishin

• Advanced Modular Systems, Inc, 354 South Fairview Ave., B1, Goleta, CA 93117, United States

References

• 1. Mishin, S. (2011). Improving manufacturability of bulk acoustic wave and surface acoustic wave devices. In Joint European Frequency and Time Forum and International Frequency Control Symposium, 9–11 December 2011 (pp. 110–112). EFTF/IFC PP. DOI: 10.1109/SPAWDA.2011.6167203.[Crossref]
• 2. Willingham, C. B., Parker, T. E., & Spooner, F. H. (1976). U.S. Patent no. 3,965,444. Washington, D.C.: U.S. Patent and Trademark Office.
• 3. Jacobs, I. S., & Bean, C. P. (1963). In G. T. Rado & H. Suhl (Eds.), Magnetism (Vol. 3, pp. 271–350). New York: Academic Press.
• 4. Haque, M. S., Naseem, H. A., & Brown, W. D. (1997). Post-deposition processing of low temperature PECVD silicon dioxide films for enhanced stress stability. Thin Solid Films, 308/309, 68–73. DOI: 10.1016/S0040-6090(97)00542-7.[Crossref]
• 5. Bizyukov, A. A., Bizyukov, I. A., Girka, O. I., Sereda, K. N., Sleptsov, V. V., Gutkin, M., & Mishin, S. (2011). Ion beam system for nanotrimming of functional microelectronics layers. Problems of Atomic Science and Technology, Seria: Plasma Phys., 1(17), 110–112.
• 6. Mishin, S., Gutkin, M., Bizyukov, A., & Sleptsov, V. (2013). Method of controlling coupling coefficient of aluminum scandium nitride deposition in high volume production. In Joint European Frequency and Time Forum and International Frequency Control Symposium (pp. 126–128). EFTF/IFC. DOI: 10.1109/EFTF-IFC.2013.6702105.[Crossref]
• 7. Gutkin, M., Bizyukov, A., Sleptsov, V., Bizyukov, I., & Sereda, K. (2009). U.S. Patent no. 7,622,721 B2. Washington, D.C.: U.S. Patent and Trademark Office.
• 8. Girka, O., Bizyukov, I., Sereda, K., Bizyukov, A., Gutkin, M., & Sleptsov, V. (2012). Compact steady-state and high-flux Falcon ion source for tests of plasma-facing materials. Rev. Sci. Instrum., 83(8), 083501. DOI: 10.1063/1.4740519.[Crossref][WoS]
• 9. Zhurin, V. V., Kaufman, H. R., & Robinson, R. S. (1999). Physics of closed drift thrusters. Plasma Sources Sci. Technol., 8(1), R1–R20. DOI: 10.1088/0963-0252/8/1/021.[Crossref]

Identifiers

DOI

10.1515/nuka-2015-0059