Structural study of TiO2 thin films by micro-Raman spectroscopy

• Authors: Ahti Niilisk , Mart Moppel , Martti Pärs , Ilmo Sildos , Taavi Jantson , Tea Avarmaa , Raivo Jaaniso , Jaan Aarik
• Languages of publication: EN

Abstracts

EN

The Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

Keywords

EN

Titanium dioxide; thin films; atomic layer deposition; pulsed laser deposition; Raman spectroscopy; 68.55.J; 78.30.Hv; 81.15.-z

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2006
• Volume: 4
• Issue: 1
• Pages: 105-116

Dates

published

1 - 3 - 2006

online

1 - 3 - 2006

Contributors

author

Ahti Niilisk

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Mart Moppel

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Martti Pärs

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Ilmo Sildos

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Taavi Jantson

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Tea Avarmaa

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Raivo Jaaniso

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

author

Jaan Aarik

• Institute of Physics, University of Tartu, Riia 142, 51014, Tartu, Estonia

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Identifiers

DOI

10.1007/s11534-005-0009-3