PSJD - Yadda

1

Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si_{3}N_{4} mask - PaDEOx

100%

Zaborowski M., Grabiec P., Dobrowolski R., Panas A., Skwara K., Szmigiel D., Wzorek M.

Acta Physica Polonica A

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2009

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vol. 116

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issue S

S-139-S-141

EN

Well-controlled method of Si nanopattern definition - pattern definition by edge oxidation have been presented. The technique is suitable for fabrication of narrow paths of width ranged from several tens of nm to several μm by means of photolithography equipment working with μm-scale design rules. Process details influencing a shape of the Si pattern have been discussed. SEM examinations have been presented.

2

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

84%

Videlier H., Dyakonova N., Teppe F., Consejo C., Chenaud B., Knap W., Lusakowski J., Tomaszewski D., Marczewski J., Grabiec P.

Acta Physica Polonica A

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2011

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vol. 120

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issue 5

927-929

EN

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

3

Scanning probe microscopy as a metrology method in microand nanostructure investigations

84%

Gotszalk T., Marendziak A., Kolanek K., Szeloch R., Grabiec P., Zaborowski M., Janus P., Rangelow I. W.

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2006

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vol. 54

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issue 1

4

Ultrathin NbN Films for Superconducting Single-Photon Detectors

68%

Słysz W., Guziewicz M., Borysiewicz M., Domagała J., Pasternak I., Hejduk K., Rzodkiewicz W., Ratajczak J., Bar J., Węgrzecki M., Grabiec P., Grodecki R., Węgrzecka I., Sobolewski R.

Acta Physica Polonica A

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2011

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vol. 120

|

issue 1

200-203

EN

We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al_2O_3 and Si wafers, and SiO_2 and Si_3N_4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.

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Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si_{3}N_{4} mask - PaDEOx

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

Scanning probe microscopy as a metrology method in microand nanostructure investigations

Ultrathin NbN Films for Superconducting Single-Photon Detectors