Results found: 3

Number of results on page

Search results

Search:
in the keywords: transmission electron microscopy

Sort By:

Limit search:

Discrete angle rotations of Bi nanoparticles embedded in a Ga matrix

100%

Be’er A., Kofman R., Lereah Y.

Open Physics

2010

vol. 8

issue 1

1-6

Spontaneous instabilities of nanoparticles are known to be influenced by the temperature, and strongly depend on the particle size. However, it is not clear what is the role of the surrounding material that is in contact with the particle. Here we report on the difference between spontaneous rotations of Bi nanoparticles embedded in amorphous SiO and those embedded in liquid Ga. The phenomenon was studied quantitatively by time resolved transmission electron microscopy using Fourier Transform analysis of highresolution electron microscopy images. While rotations of Bi nanoparticles embedded in amorphous SiO occur by all angles, the rotations of Bi nanoparticles embedded in liquid Ga occur by discrete angles. Our results point quantitatively, for the first time, to the role and importance of the contacting surrounding surface during the rotation of nanoparticles.

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

80%

Li H., Sang J., Liu C., Lu H., Cao J.

Open Physics

2008

vol. 6

issue 3

638-642

Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.

Quantitative estimation of lysosomal storage in mucopolysaccharidoses by electron microscopy analysis

80%

Narajczyk M., Moskot M., Konieczna A.

2012

vol. 59

issue 4

693-696

Mucopolysaccharidoses (MPS) are severe inherited metabolic disorders caused by storage of glycosaminoglycans (GAGs). The level of accumulated GAGs is an important parameter in assessment of the severity of the disease and the efficacy of treatment; unfortunately, biochemical methods are often unreliable and only semi-quantitative. Therefore, finding other methods for estimation of GAG levels and/or assessment of the efficacy of applied therapy is very important. Although monitoring of GAG levels during therapy is crucial, in this work it is proposed that analysis of the ultrastructure of MPS cells by electron microscopic techniques can be considered as an alternative and reliable method for assessment of lysosomal storage. The number of complex lysosomal structures was found to be significantly higher in MPS cells relative to controls, while it decreased significantly in response to either enzyme replacement therapy or substrate reduction therapy. Thus, this parameter, easily assessed by electron microscopy, appears to correspond to the physiological state of MPS cells.

Refine search results

2 Open Physics

1 Acta Biochimica Polonica

1 2012

1 2010

1 2008

1 Be’er A.

1 Cao J.

1 Kofman R.

1 Konieczna A.

1 Lereah Y.

1 Li H.

1 Liu C.

1 Lu H.

1 Moskot M.

1 Narajczyk M.

1 Sang J.

Search results

Discrete angle rotations of Bi nanoparticles embedded in a Ga matrix

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Quantitative estimation of lysosomal storage in mucopolysaccharidoses by electron microscopy analysis