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Spark plasma sintering of Si3N4/multilayer graphene composites

100%
Bódis E., Tapasztó O., Károly Z., Fazekas P., Klébert S., Keszler A. M., Balázsi K., Szépvölgyi J.
Open Chemistry
|
2015
|
vol. 13
|
issue 1
EN
Mulitlayer graphene reinforced silicon nitride composites were prepared by spark plasma sintering to investigate the effect of the graphene addition on mechanical properties. The composites contained multilayer graphene (MLG) in various (0, 1, 3 and 5 wt%) content. Significantly higher fracture toughness of 8.0 MPa m1/2 was obtained at 1% MLG content, however, on further increasing the graphene content the toughness did not increase, but dropped to the value of the monolithic silicon nitride. The maximum hardness of 18.8 MPa was also obtained at 1% MLG, while at higher MLG contents it gradually decreased.
2
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Plasma treatment studies of MIS devices

88%
Basa D.
Open Physics
|
2010
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vol. 8
|
issue 3
400-407
EN
Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH4) and ammonia(NH3) with nitrogen(N2) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N2O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process.
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Silicon nitride/carbon nanotube composites: preparation and characterization

75%
Mikuśkiewicz M., Mikuśkiewicz M.
|
2021
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