Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

Search:
in the keywords:  phototransistor
help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Simulations of AlGaAs/GaAs heterojunction phototransistors

100%
Ściana B., Panek M., Borczuch A., Tłaczała M.
Open Physics
|
2011
|
vol. 9
|
issue 4
1114-1121
EN
Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.