Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

Search:
in the keywords:  photoelectric measurements
help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Distributions of electric parameters in MOS structures on 3C-SiC substrate

100%
Piskorski K., Przewlocki H., Esteve R., Bakowski M.
Open Physics
|
2013
|
vol. 11
|
issue 2
231-238
EN
In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference ϕMS, the barrier height at the gate-dielectric interface E BG and the flat-band in semiconductor voltage V FB were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.