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1

Structure and Electrical Resistivity Dependence of Molybdenum Thin Films Deposited by DC Modulated Pulsed Magnetron Sputtering

100%

Wicher B., Chodun R., Nowakowska-Langier K., Okrasa S., Król K., Minikayev R., Strzelecki G., Zdunek K.

Archives of Metallurgy and Materials

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2018

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vol. 63

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issue 3

2

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

100%

Sieradzka K., Kaczmarek D., Domaradzki J., Prociów E., Mazur M., Górnicka B.

Open Physics

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2011

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vol. 9

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issue 2

313-318

EN

Electrical and optical properties of TiO2:Pd thin films deposited from Ti-Pd mosaic targets sputtered in reactive oxygen plasma have been studied. The properties were investigated for thin films with the Pd amount of 5.5 at. %, 8.4 at. % and 23 at. %. Based on resistivity measurements a drop from 103 down to almost 10−3Ωcm has been recorded when the Pd amount was varied from 5.5 at. % to 23 at. %, respectively. Moreover, it was shown that doping with different amounts of Pd results in the possibility of obtaining both types of electrical conduction: n-type for the TiO2 with 5.5 at. % and 8.4 at. % of Pd and p-type for the TiO2 with 23 at. % of Pd thin films. From optical measurements it has been found that as the Pd amount was increased the transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength range of up to 600 nm. The optical band gap was calculated for direct and indirect transitions from optical absorption spectra. Structural properties were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD patterns displayed occurrence of the crystalline, TiO2-rutile for lower Pd amounts (5.5 at. %, 8.4 at. %), while the TiO2:Pd (23 at. %) thin films displayed XRD-amorphous behaviour. Images obtained from AFM displayed dense, nanocrystalline structure with homogenous distribution of crystallites. Additionally performed secondary ion mass spectroscopy investigation confirmed homogenous distribution of Pd in the whole thickness of the prepared thin films.

3

Effect of Nitridation and Pre-Growth Annealing of the Sapphire Substrate on the Quality of Zinc Oxide Thin Films Grown by RF-Magnetron Sputtering

100%

Baseer Haider M.

Acta Physica Polonica A

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2017

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vol. 132

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issue 4

1325-1328

EN

ZnO has attracted much attention due to its wide bandgap (3.2 eV) and high exciton binding energy of 60 meV. These properties make ZnO a highly desirable material for high frequency devices that can work in harsh environment. We have grown ZnO thin films at different temperatures ranging from 100°C to 500°C. We have observed that surface roughness is first decreased with the increase in the growth temperature but then by further increasing the growth temperature beyond 300°C, results in increased surface roughness of the grown samples, whereas grain size of the samples increases with the increase in the growth temperature. Crystalline quality of the films is also improved with the increase in the growth temperature but then degrades by further increase beyond 200°C. We achieved the highest Hall mobility for the ZnO sample grown at 200°C. The optimum growth condition of ZnO thin films on sapphire (0001) in our RF/DC magnetron-sputtering unit were achieved for the films grown at 200°C. Subsequently, we performed pre-growth treatment to the sapphire substrate then grew ZnO films at 200°C. Pre-growth treatment involved heating the substrate at 500°C for about half an hour and then etching the sapphire surface with nitrogen plasma. We have observed that pre-growth heating and nitridation of the sapphire substrate results in bigger grain size whereas no improvement was observed in the crystallinity of the film.

4

Effect of Structure on Physicomechanical Properties of Transition Metals Diboride Films

75%

Goncharov A., Yunda A., Komsta H., Rogalski P.

Acta Physica Polonica A

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2017

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vol. 132

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issue 2

270-273

EN

Research of the effect of structure on composition and physicomechanical properties of transition metals diboride films deposited by RF-magnetron sputtering was carried out. It was shown that there is a wide range of different structures, from amorphous to nanocrystalline one with 1-40 nm nanocrystallite sizes in the case of transition metals diboride films. The correlation between the structure, composition, and physicomechanical properties of transition metals diboride films was established.

5

Structural properties of transparent Ti-V oxide semiconductor thin films

75%

Sieradzka K., Kaczmarek D., Morgiel J., Domaradzki J., Prociow E., Adamiak B.

Open Physics

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2013

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vol. 11

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issue 2

251-257

EN

Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.

6

Influence of the structural and surface properties on photocatalytic activity of TiO2:Nd thin films

75%

Wojcieszak D., Mazur M., Kaczmarek D., Morgiel J., Poniedziałek A., Domaradzki J., Czeczot A.

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EN

Titanium dioxide thin films doped with the same amount of neodymium were prepared using two different magnetron sputtering methods. Thin films of anatase structure were deposited with the aid of Low Pressure Hot Target Magnetron Sputtering, while rutile coatings were manufactured using High Energy Reactive Magnetron Sputtering process. The thin films composition was determined by energy dispersive spectroscopy and the amount of the dopant was equal to 1 at. %. Structural properties were evaluated using transmission electron microscopy and revealed that anatase films had fibrous structure, while rutile had densely packed columnar structure. Atomic force microscopy investigations showed that the surface of both films was homogenous and consisted of nanocrystalline grains. Photocatalytic activity was assessed based on the phenol decomposition. Results showed that both thin films were photocatalytically active, however coating with anatase phase decomposed higher amount of phenol. The transparency of both thin films was high and equal to ca. 80% in the visible wavelength range. The photoluminescence intensity was much higher in case of the coating with rutile structure.

Refine search results

Structure and Electrical Resistivity Dependence of Molybdenum Thin Films Deposited by DC Modulated Pulsed Magnetron Sputtering

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

Effect of Nitridation and Pre-Growth Annealing of the Sapphire Substrate on the Quality of Zinc Oxide Thin Films Grown by RF-Magnetron Sputtering

Effect of Structure on Physicomechanical Properties of Transition Metals Diboride Films

Structural properties of transparent Ti-V oxide semiconductor thin films

Influence of the structural and surface properties on photocatalytic activity of TiO2:Nd thin films