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EN
In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process - kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples - determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.
EN
The objective of this paper is to study the location of the shear damage to the fiber matrix interface of a hybrid composite material by using the nonlinear acoustic technique, which is commonly described by the addition of a non-linear term in Hooke’s law. The genetic simulation is based on the probabilistic Weibull model including non-linear parameter β. The results obtained show good agreement between the numerical simulation and the actual behavior of two hybrid composite materials: alfa-carbon/Epoxy and glass-carbon/ Epoxy. In addition the results are similar to those obtained by the analytical model, which based on the Cox and Weibull formalism. The extended study for nanocomposite materials is interesting in the future.
Open Physics
|
2009
|
vol. 7
|
issue 3
503-508
EN
The reactive-wetting process, e.g. spreading of a liquid droplet on a reactive substrate is known as a complex, non-linear process with high sensitivity to minor fluctuations. The dynamics and geometry of the interface (triple line) between the materials is supposed to shed light on the main mechanisms of the process. We recently studied a room temperature reactive-wetting system of a small (∼ 150 μm) Hg droplet that spreads on a thin (∼ 4000 Å) Ag substrate. We calculated the kinetic roughening exponents (growth and roughness), as well as the persistence exponent of points on the advancing interface. In this paper we address the question whether there exists a well-defined model to describe the interface dynamics of this system, by performing two sets of numerical simulations. The first one is a simulation of an interface propagating according to the QKPZ equation, and the second one is a landscape of an Ising chain with ferromagnetic interactions in zero temperature. We show that none of these models gives a full description of the dynamics of the experimental reactivewetting system, but each one of them has certain common growth properties with it. We conjecture that this results from a microscopic behavior different from the macroscopic one. The microscopic mechanism, reflected by the persistence exponent, resembles the Ising behavior, while in the macroscopic scale, exemplified by the growth exponent, the dynamics looks more like the QKPZ dynamics.
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