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Tracing temperature characteristics in diode-transistor circuits having multiple DC solutions

100%
Tadeusiewicz M., Hałgas S.
|
2007
|
vol. 55
|
issue 3
2
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Radiation Degradation of Bipolar Transistor Current Gain

75%
Miskiewicz S., Komarov A., Komarov F., Zayats G., Soroka S.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
288-290
EN
Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".
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