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1
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Selectivity in photocatalysis by particulate semiconductors

100%
Karunakaran C., Dhanalakshmi R.
Open Chemistry
|
2009
|
vol. 7
|
issue 1
134-137
EN
TiO2, Fe2O3, CuO, ZnO, ZnS, Nb2O5, MoO3, CdO, CdS, Sb2O3, CeO2, HgO, Pb2O3, PbO2 and Bi2O3 microparticles exhibit band gap excitation with UV-A light but they are selective to photodegrade phenols. While TiO2 anatase and ZnO photocatalyze the degradation of phenol, o-aminophenol, m-aminophenol, p-aminophenol, o-chlorophenol, m-chlorophenol, p-chlorophenol, o-nitrophenol, p-nitrophenol, o-cresol, m-cresol, p-cresol, catechol, resorcinol and quinol, MoO3 does not photodegrade any of the fifteen phenols. Fe2O3, CuO, ZnS, Nb2O5, CdO, CdS, Sb2O3, CeO2, HgO, Pb2O3, PbO2 and Bi2O3 are selective in photodegrading the fifteen phenols; however, the phenols get adsorbed over all sixteen particulate semiconductors. [...]
2
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Surface diffusion of Pb on clean Si surfaces

72%
Dolbak A., Zhachuk R., Olshanetsky B.
Open Physics
|
2004
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vol. 2
|
issue 2
254-265
EN
Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.
3
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Ge diffusion on Si surfaces

72%
Dolbak A., Olshanetsky B.
Open Physics
|
2006
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vol. 4
|
issue 3
310-317
EN
Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.
4
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Mechanism of Cu transport along clean Si surfaces

58%
Dolbak A., Zhachuk R., Olshanetsky B.
Open Physics
|
2003
|
vol. 1
|
issue 3
463-473
EN
Cu diffusion along clean Si(111), (110) and (100) surfaces are investigated by Auger electron spectroscopy and low energy electron diffraction. The effective diffusion coefficients of copper are measured in the temperature range from 500 to 650°C. It is shown that the Cu transport along silicon surface occurs by the diffusion of Cu atoms through Si bulk and the segregation of Cu atoms to the surface during the diffusion process. It is found that the segregation coefficients of Cu to silicon surface during the diffusion process depend on surface orientation.
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