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Surface diffusion of Pb on clean Si surfaces

100%

Dolbak A., Zhachuk R., Olshanetsky B.

Open Physics

2004

vol. 2

issue 2

254-265

Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.

Mechanism of Cu transport along clean Si surfaces

80%

Dolbak A., Zhachuk R., Olshanetsky B.

Open Physics

2003

vol. 1

issue 3

463-473

Cu diffusion along clean Si(111), (110) and (100) surfaces are investigated by Auger electron spectroscopy and low energy electron diffraction. The effective diffusion coefficients of copper are measured in the temperature range from 500 to 650°C. It is shown that the Cu transport along silicon surface occurs by the diffusion of Cu atoms through Si bulk and the segregation of Cu atoms to the surface during the diffusion process. It is found that the segregation coefficients of Cu to silicon surface during the diffusion process depend on surface orientation.

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2 Open Physics

1 2004

1 2003

2 Dolbak A.

2 Olshanetsky B.

2 Zhachuk R.

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Surface diffusion of Pb on clean Si surfaces

Mechanism of Cu transport along clean Si surfaces