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EN
The phosphosilicate for planar waveguides fabrication by using sol-gel, and particularly erbium-doped waveguide amplifiers, is reviewed. In particular, efforts to use sol-gel to improve molecular homogeneity in Er-doped phosphosilicate-based monolith and thin films will be discussed. A variety of material studies was carried out to investigate and optimize the sample preparation condition for such application. These include X-ray diffraction, the Fourier transform infrared and optical transmittance, absorption and refractive index calculation. The erbium nitrate precursors use is shown to alter the Er³⁺ ions doping in the prepared samples thermally treated in the final monolith glass form, in comparison to the use of thin film phosphosilicate sol-gel sample. Excess heat treatment is used to force prepared samples crystallization, moreover resulting photoluminescence analysis is used to detect the co-operative-up-conversion sample properties before and after heating.
EN
The core-multishell wurtzite structure (In,Ga)As-(Ga,Al)As-(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour-liquid-solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400°C, and 230°C, for (Ga,Al)As, and (Ga,Mn)As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared by focused ion beam. High quality cross-sections suitable for quantitative transmission electron microscope analysis have been obtained and enabled analysis of interfaces between the core and the shells with near atomic resolution. All investigated shells are epitaxial without misfit dislocations at the interface. Some of the shells thicknesses are not symmetric, which is due to the shadowing effects of neighbouring nanowires and directional character of the elemental fluxes in the MBE growth process.
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