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Synthesis and Characterization of an Efficient New Liquid Laser Dye Material - Chalcone (DMAPPP)

100%

Elzupir A., Ibnaouf K., Idriss H., Ibrahem M., Prasad S., Alrajhi M., AlSalhi M., Alaamer A.

Acta Physica Polonica A

2018

vol. 133

issue 1

121-125

This paper comprises the synthesis and characterization of 3-(4-(dimethylamino)phenyl)-1-phenyl-(2E)-propen-1-one (DMAPPP) and its application as a new laser medium. The absorption and fluorescence spectra of DMAPPP under different solvents and concentrations have been investigated. The amplified spontaneous emission performance of DMAPPP under various concentrations, organic solvents and pump pulse energies of Nd:YAG laser (355 nm) was also studied. The amplified spontaneous emission spectra of DMAPPP in solution were compared with a conventional laser dye of coumarin 503, under the same identical conditions. The gain and the fluorescence quantum yield of DMAPPP were determined. The most important features are: (1) DMAPPP has an excellent photochemical stability, (2) the amplified spontaneous emission from the DMAPPP was tuned in the wavelength region between 515 and 548 nm. This could be the first detailed paper on laser properties of DMAPPP.

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

86%

Tanaka H., Kawazoe T., Ohtsu M., Akahane K.

Fluorescent Materials

2015

vol. 1

issue 1

We fabricated a silicon (Si) laser by applying a dressed-photon–phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon- insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing lightwaveguides. We designed light waveguides having a thickness of 15 μm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 μm. The intensity of amplified spontaneous emission (ASE) lightwas too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm2 from the current– voltage characteristic. This threshold current density was twenty-eight times smaller than that of a Si laser we fabricated previously.

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1 Acta Physica Polonica A

1 Fluorescent Materials

1 2018

1 2015

1 Akahane K.

1 AlSalhi M.

1 Alaamer A.

1 Alrajhi M.

1 Elzupir A.

1 Ibnaouf K.

1 Ibrahem M.

1 Idriss H.

1 Kawazoe T.

1 Ohtsu M.

1 Prasad S.

1 Tanaka H.

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Synthesis and Characterization of an Efficient New Liquid Laser Dye Material - Chalcone (DMAPPP)

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons