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Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

100%

Murugan S., Murali K.

vol. 126

issue 3

727-732

In this work, the pulse electrodeposition technique was employed for the first time to deposit AgInSe_2 films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO_2. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to AgInSe_2. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe_2 solar cells increased with duty cycle.

Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

100%

Koroliov A., Arlauskas A., Balakauskas S., Šoliūnas M., Maneikis A., Krotkus A., Šetkus A., Tamošiūnas V.

Acta Physica Polonica A

2013

vol. 124

issue 5

846-848

In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se_2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se_2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se_2 and n-type ZnO layers.

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

100%

Prucnal S., Jiao F., Reichel D., Zhao K., Cornelius S., Turek M., Pyszniak K., Drozdziel A., Skorupa W., Helm M., Zhou S.

vol. 125

issue 6

1404-1408

Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.

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3 Acta Physica Polonica A

2 2014

1 2013

1 Arlauskas A.

1 Balakauskas S.

1 Cornelius S.

1 Drozdziel A.

1 Helm M.

1 Jiao F.

1 Koroliov A.

1 Krotkus A.

1 Maneikis A.

1 Murali K.

1 Murugan S.

1 Prucnal S.

1 Pyszniak K.

1 Reichel D.

1 Skorupa W.

1 Tamošiūnas V.

1 Turek M.

1 Zhao K.

1 Zhou S.

1 Šetkus A.

1 Šoliūnas M.

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Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer