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EN
In this paper, we have proposed dye-sensitized hybrid solar cell based on TiO_2 nanoparticles as a medium for electron transport and conjugated polymers as hole-conductor, where dye molecules absorb solar radiation and create electron-hole pairs. This solar cell can be a better alternative to conventional electrolyte based dye-sensitized solar cells, because of enhanced characteristics of performance. We have simulated it numerically, to study essential characteristics of the structure such as electron, hole and their current densities and internal electric field in two operating conditions of open-circuit and short-circuit cases. Then current-voltage characteristic diagram has been plotted and energy conversion efficiency calculated.
EN
CdS quantum dots were coated on TiO_2 layer by successive ionic layer adsorption and reaction method. An efficient photovoltaic energy conversion and significant quantum-size effect were observed. The magnitude of the short-circuit photocurrent density J_{SC} was found to be approximately 6.01 mA/cm^2 for graphene oxide-incorporated CdS/TiO_2 solar cell, while the J_{SC} of only CdS-sensitized solar cells was lower than 4.40 mA/cm^2. The efficiency of the CdS/TiO_2 solar cell with a graphene oxide layer containing CdS QDs was 60% higher than that of the CdS/TiO_2 solar cell. The cell efficiency was remarkably improved with the graphene oxide-incorporation. The carrier recombination of the QDs sensitized solar cells based on CdS-coated TiO_2 was significantly suppressed due to photogenerated charge carrier transports resulting from the presence of graphene oxide.
EN
The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne⁺ ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.
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vol. 126
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issue 3
727-732
EN
In this work, the pulse electrodeposition technique was employed for the first time to deposit AgInSe_2 films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO_2. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to AgInSe_2. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe_2 solar cells increased with duty cycle.
EN
The impact of illuminance on changes of the solar cell electromotive force is analyzed. A mathematical model for a solar cell electromotive force dependence on illuminance is presented. For this purpose, a selection of experimental data trend function was carried out, and the Pearson correlation coefficients were established. The most optimal results were obtained in case of an exponential function with the strongest correlation (R^2=0.983). The analysis has shown that at 100 W/m^2 illuminance the electromotive force saturation is obtained (the electromotive force changes insignificantly and fluctuates at around 2 V), which indicates that upon reaching such an illuminance a solar cell operates at maximum efficiency. A first-order differential equation satisfied by the trend function has been compiled. When interpreting illuminance as an evolution variable, the proposed mathematical model can be interpreted as a dynamical system. The deviation frequency spectrum of the measurement values with respect to the theoretical prediction is analyzed.
EN
A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending E_{sbb} at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height φ_{b0} (variation of the surface band bending E_{sbb}) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.
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Enhancing photocell power by noise-induced coherence

80%
EN
We show that coherence induced by Fano interference can enhance the power produced by photovoltaic devices, e.g. photodetectors and solar cells, as compared to the same system with no coherence. No additional external energy source is necessary to create such induced coherence. In the present model, coherence generated by photocurrent increases (for optically thin cells) the flow of electrons through the load, which reduces radiative recombination and enhances cell power. We discuss two schemes in which coherence is generated between upper or lower energy levels. We also study the influence of decoherence, τa, on cell power and show that one can design a device with Fano enhancement even at relatively large decoherence rates. Finally we investigate the effect of ambient temperature Ta on the cell power in a scheme with no interference and show that for certain parameters power can be increased by increasing Ta.
EN
In this paper, the global and diffuse solar radiation incident on solar cells is simulated using a spectral model SMARTS2, for varying atmospheric conditions on the site of Setif. The effect of changes in total intensity and spectral distribution on the short circuit current and efficiency of different kinds of thin film solar cells (CdTe, nc-Si:H and copper indium gallium selenide, CIGS) is examined. The results show a reduction in the short circuit current due to increasing turbidity. It is 18.82%, 27.06% and 26.80% under global radiation and for CdTe, nanocrystalline silicon (nc-Si:H), and CIGS solar cells, respectively. However it increases under diffuse radiation. Increasing water vapor in the atmosphere leads to a reduction in the short circuit current of 3.15%, 2.38%, and 2.45%, respectively, for CdTe, nc-Si:H, and CIGS cells under global radiation and it is not influenced under diffuse radiation. The performance of the solar cells is notably reduced, both in terms of efficiency and open circuit voltage, with increasing air mass.
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