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1

Phase Noise Minimization in CMOS Voltage Controlled Oscillators

100%

Charlamov J., Navickas R., Baskys A.

Acta Physica Polonica A

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2011

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vol. 119

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issue 2

234-236

EN

Relaxation RC type voltage controlled oscillator is more desirable for many applications because of wide frequency generation range, small size on chip and linear voltage to frequency transfer characteristic. The limiting factor of such voltage controlled oscillator type is that it has higher phase noise in comparison with liquid crystal oscillators. We discuss how different device components, parameters and configuration influence phase noise, including transistor noise sources dependence on its geometrical parameters. The simulation results of the relaxation voltage controlled oscillator which was implemented in different 180 nm and 90 nm CMOS technologies are reported.

2

Unstable Inverse Heat Transfer Problems in Microelectronics

100%

De Mey G., Bogusławski B., Kos A.

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EN

Inverse heat transfer problems are very important for the thermal testability of integrated circuits. Temperature sensors integrated on the same chip measure in real time the power dissipation in one or more critical heat sources of the circuit in order to prevent overheating. It will be demonstrated that these kinds of problems can give rise to mathematical unstabilities or the ill conditioning of the inverse problem. This statement will be proved with the help of several particular cases.

3

The Fast Differential Amplifier-Based Integrated Circuit Yield Analysis Technique

100%

Baskys A., Navickas R., Simkevicius C.

Acta Physica Polonica A

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2011

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vol. 119

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issue 2

259-261

EN

The fast differential amplifier-based integrated circuit yield analysis technique, which enables determining the interrelation between the integrated circuit yield and dimensions of circuit elements, has been presented. The technique is based on the common use of experimental statistical analysis and statistical modeling as well as on the introduction of the concept of the integrated circuit intermediate parameters. The results of yield analysis of the concrete integrated circuit based on the differential amplifiers are presented.

4

Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

63%

Baeumler M., Polyakov V., Gütle F., Dammann M., Benkhelifa F., Waltereit P., Reiner R., Müller S., Wespel M., Quay R., Mikulla M., Wagner J., Ambacher O.

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vol. 125

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issue 4

982-985

EN

The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.

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4 Acta Physica Polonica A

1 2014

1 2013

2 2011

2 Baskys A.

2 Navickas R.

1 Ambacher O.

1 Baeumler M.

1 Benkhelifa F.

1 Bogusławski B.

1 Charlamov J.

1 Dammann M.

1 De Mey G.

1 Gütle F.

1 Kos A.

1 Mikulla M.

1 Müller S.

1 Polyakov V.

1 Quay R.

1 Reiner R.

1 Simkevicius C.

1 Wagner J.

1 Waltereit P.

1 Wespel M.

Phase Noise Minimization in CMOS Voltage Controlled Oscillators

Unstable Inverse Heat Transfer Problems in Microelectronics

The Fast Differential Amplifier-Based Integrated Circuit Yield Analysis Technique

Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications