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1
Content available remote

Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

100%
Figielski T., Mąkosa A., Wosiński T., Harness P., Singer K.
Acta Physica Polonica A
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1993
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vol. 84
|
issue 4
817-819
EN
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
2
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Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling

100%
Figielski T., Wosiński T., Mąkοsa A., Kaniewska M., Regiński K.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
707-710
EN
A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnel­ling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.
3
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Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

100%
Vitusevich S., Figielski T., Mąkosa A., Wosiński T., Belyaev A., Konakova R., Kravchenko L.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
377-380
EN
For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage char­acteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
4
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Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices

100%
Belyaev A. E., Vitusevich S. A., Glavin B. A., Mąkosa A., Dobrowolski W.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 4
675-678
EN
An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers.
5
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Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

100%
Belyaev A., Vitusevich S., Glavin B., Konakova R., Dobrowolski W., Mąkosa A., Kravchenko L., Gornev E.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 4
727-730
EN
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
6
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Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots

100%
Belyaev A., Eaves L., Main P., Polimeni A., Stoddart S., Henini M.
Acta Physica Polonica A
|
1998
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vol. 94
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issue 2
245-249
EN
An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.
7
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Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator

100%
Figielski T., Wosiński T., Mąkosa A., Dobrowolski W., Vitusevich S., Belyaev A.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 4
781-784
EN
An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
8
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Traversal Time through Double-Barrier Resonant Tunneling Structure

100%
Figielski T.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 3
587-589
EN
There are certain confusing statements in the literature concerning a physical time that is responsible for a high-frequency limit in operation of double-barrier resonant tunneling devices. Here, it is shown that an electron traversal time, introduced earlier by ours, exhibits no singularity on resonance and might be a good candidate for the quantity in question.
9
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Coherent and Sequential Tunneling in High Magnetic Field

100%
Belyaev A. E., Vitusevich S. A., Maude D., Portal J. C.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
704-708
EN
In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
10
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Tunneling in Semiconductor Nanostructures: Physics and Devices

80%
Lüth H.
Acta Physica Polonica A
|
1996
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vol. 90
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issue 4
667-679
EN
Since modern semiconductor epitaxy techniques have reached the present level of perfectness, resonant tunneling through double barrier structures has attracted new interest, also with respect to novel device applications. The present review shortly discusses the underlying physical concepts of resonant tunneling through semiconductor multiple heterostructures. Beside resonant tunneling diodes also concepts for tunneling transistors are discussed. In particular, a novel 2D-2D tunnel transistor is presented, in which tunneling between two neighboring two-dimensional electron gases yields current-voltage characteristics with two types of instabilities depending on the applied gate voltage. Scaling down the lateral dimensions of a resonant tunneling diode leads to quantum boxes or dots, in which the effect of single electron tunneling with Coulomb-blockade can be observed. The underlying physics is discussed on the basis of recent experiments and theoretical calculations. Finally some possible future applications both of resonant tunneling diodes and of single electron devices are presented.
11
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Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer

80%
Wosiński T., Figielski T., Mąkosa A., Wrotek S., Dobrowolski W.
Acta Physica Polonica A
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1998
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vol. 94
|
issue 3
617-621
EN
Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
12
Content available remote

Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation

80%
Papadopoulou P., Stavrinides S., Hanias M., Magafas L.
Acta Physica Polonica A
|
2015
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vol. 127
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issue 4
1349-1351
EN
In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
13
Content available remote

Resonant Tunnelling Studies of Chaos in Quantised Systems

80%
Eaves L., Fromhold T., Wilkinson P., Sheard F.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
609-619
EN
This paper gives a brief introductory overview of quantum chaology, with particular reference to recent experimental work involving the use of semiconductor heterostructures. In the presence of a tilted magnetic field, a double-barrier resonant-tunnelling device incorporating a quantum well produces a chaotic stadium for electron motion. The basic properties of this system are described. It is shown how resonant magnetotunnelling spectroscopy provides firm experimental evidence for the effect of scarred wave functions on a physically-measurable property, in this case the measured current-voltage characteristics of the device. The paper concludes with some speculations concerning for the development of this field.
14
Content available remote

Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures

80%
Figielski T., Wosiński T., Mąkosa A.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
777-780
EN
We argue that the well-boundary roughness in a double-barrier heterostructure induces subsidiary subbands in the quantum well which, in turn, lead to the appearance of a broad shoulder beyond the principal resonance peak in the current-voltage characteristics.
15
Content available remote

Phase-Space Approach to the Position-Momentum Correlations of the Conduction Electron States in a Double-Barrier Resonant Nanosystem

80%
Kaczor U., Wołoszyn M., Spisak B.
Acta Physica Polonica A
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2017
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vol. 132
|
issue 1
106-108
EN
The phase-space formulation of quantum mechanics based on the Wigner distribution function is applied to investigate the influence of the scattering processes on the electronic position-momentum correlations in the resonant-tunnelling nanosystem.
16
Content available remote

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

61%
Lewińska S., Gryglas-Borysiewicz M., Przybytek J., Baj M., Jouault B., Gennser U., Ouerghi A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
606-608
EN
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
17
Content available remote

Photon-induced switching and tunneling phenomena in a YBCO thin film junction

51%
Yang X., Beckwith A., Miller J.
Open Physics
|
2005
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vol. 3
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issue 1
24-34
EN
In the persistent photoconductivity (PPC) phenomenon, illumination of a YBa2Cu3O6.5 thin film junction with a 1mW He−Ne laser leads to the decrease of the critical voltage (similar to the threshold voltage). The decrease of the critical voltage was reversed by illumination with incandescent light. The critical voltage across the junction was experimentally decreased and increased by alternating illumination between He−Ne laser and incandescent light. We also observed visible quenching of the photo-induced state using a 5mW He−Ne laser. Finally, the threshold behavior of the junction was destroyed by illuminating it with incandescent light.
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