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Terahertz Response of a Point Contact Based on CdTe/CdMgTe Quantum Well in Magnetic Field

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Grigelionis I., Białek M., Grynberg M., Czapkiewicz M., Kolkovskiy V., Wiater M., Wojciechowski T., Wróbel J., Wojtowicz T., But D., Knap W., Łusakowski J.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1069-1072
EN
A photoresponse at THz frequencies of a quantum point contact fabricated on a CdTe/CdMgTe quantum well was studied at low temperatures as a function of magnetic field. The spectra show a structure which was interpreted as resulting from the cyclotron resonance and magnetoplasmon excitations. The wavelength of the fundamental magnetoplasmon mode was found to be about 2 μm which coincides with one of dimensions of the point contact. We also discuss the possibility of coupling of magnetoplasmon modes to shallow impurity transitions in the quantum well.
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Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation

80%
Papadopoulou P., Stavrinides S., Hanias M., Magafas L.
Acta Physica Polonica A
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2015
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vol. 127
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issue 4
1349-1351
EN
In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
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