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1
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Isolated DC and AC Current Amplifier with Magnetic Field Sensor in Loop and Amorphous Ring Core

100%
Petruk O., Kachniarz M., Szewczyk R.
Acta Physica Polonica A
|
2017
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vol. 131
|
issue 4
1174-1176
EN
This paper presents innovative isolated DC and AC current amplifier containing magnetic field sensor in the feedback loop. The amorphous ring core with an air gap is utilized as a part of the galvanic isolation separating input and output currents. In the paper outline of the amplifier is presented. The printed circuit board project was developed and electronic circuit of the amplifier was manufactured. The developed device was investigated with DC and AC current and the results are presented in the paper. Results indicate usefulness of the developed device in described application.
2
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Novel Method of Offset Voltage Minimization in Hall-Effect Sensor

100%
Petruk O., Kachniarz M., Szewczyk R.
Acta Physica Polonica A
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2017
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vol. 131
|
issue 4
1177-1179
EN
The paper presents numerical model and validation of new methodology of offset voltage minimization in the Hall-effect sensors. Model of the Hall-effect sensor with multiple electric pins was developed. Mathematical equations used for calculation of electric potential difference were formulated. Simulations were carried out using finite elements method in ELMER FEM software. Performed investigation of actual parameters of newly designed Hall-effect sensor confirms effectiveness of the described method.
3
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Implementation of Conductance Tomography in Detection of the Hall Sensors Inhomogeneity

100%
Petruk O., Nowak P., Szewczyk R.
Acta Physica Polonica A
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2017
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vol. 131
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issue 4
1186-1188
EN
Tomography is a useful tool for objects reconstruction in non-destructive testing. Many kinds of tomography, depending on the penetrating wave character, are available and adapted for specific application. This paper presents new kind of tomography - conductance tomography extended with a Hall effect. Its development was motivated by the need on inhomogeneity detection in thin film Hall effect sensor, particularly graphene Hall effect sensors. Paper presents complete description of the tomographic method and tomography software developed in the GNU Octave. Inverse transformation is based on optimization method. Each shape reconstruction was done with the finite element method using the open source software: Elmer FEM and Salome. Results confirmed the suitability of the work.
4
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Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

100%
Pérez S., Mateos J., González T.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
111-113
EN
By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic Γp valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, δ-doping, recess-to-drain distance and recess length on the frequency of the ultrafast Gunn-like oscillations. The simulations show that a minimum value for the δ-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases the oscillation frequency, so provides an interesting frequency tunability of this THz source.
5
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Characterization of ZnO Films Grown at Low Temperature

100%
Przeździecka E., Krajewski T., Wójcik-Głodowska A., Yatsunenko S., Łusakowska E., Paszkowicz W., Guziewicz E., Wachnicki Ł., Szczepanik A., Godlewski M.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1303-1310
EN
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
6
Content available remote

Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors

75%
Kachniarz M., Petruk O., Salach J., Ciuk T., Strupiński W., Bieńkowski A., Szewczyk R.
Acta Physica Polonica A
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2017
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vol. 131
|
issue 5
1250-1253
EN
The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
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