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Morphological Differences and Their Effects on the Mechanical Properties of Titanium Oxides Thin Film Obtained via Anodization Process

100%

Sarıca N., Öztürk Z., Bindal C., Üçışık A.

Acta Physica Polonica A

2016

vol. 129

issue 4

759-761

It is well known that anodization process is helpful for obtaining metallic oxides on the metal surfaces. The advantages of this process are used in this study to obtain rough surfaces consisting of titanium oxides and solid solutions of titanium and oxygen. Two different voltages were applied to a pure titanium foil during two process time periods. In all process conditions, titanium oxide thin films were successfully obtained on the base material. Depending on the duration of the process and the voltages applied, the amount and the sizes of oxide particles were changed. EDX analysis combined with SEM and AFM clearly showed that rough surfaces were obtained. Having rough surfaces would be helpful for bonding to another material. However, in the micro-nano scale it is clear that the inhomogeneous mechanical and chemical properties were obtained, most probably resulting in inhomogeneous crack initiation.

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

51%

Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

325-328

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

Luminescence of Lanthanides from Xerogels Embedded in Mesoporous Matrices

32%

Gaponenko N.

Acta Physica Polonica A

2007

vol. 112

issue 5

737-749

The report summarizes peculiarities of synthesis and luminescence properties of porous silicon, porous anodic alumina and artificial opals with the inclusions of sol-gel derived oxides (xerogels), doped with Er, Tb, and Eu. Origin of strong luminescence of lanthanides from xerogels in mesoporous matrices is discussed.

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3 Acta Physica Polonica A

1 2017

1 2016

1 2007

1 Benyahia D.

1 Bindal C.

1 Boguski J.

1 Gaponenko N.

1 Ivaldi F.

1 Kubiszyn Ł.

1 Kębłowski A.

1 Martyniuk P.

1 Michalczewski K.

1 Piotrowski J.

1 Rogalski A.

1 Sarıca N.

1 Öztürk Z.

1 Üçışık A.

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Morphological Differences and Their Effects on the Mechanical Properties of Titanium Oxides Thin Film Obtained via Anodization Process

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

Luminescence of Lanthanides from Xerogels Embedded in Mesoporous Matrices