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1

Simulations of Si and SiO_{2} Etching in SF_{6}+O_{2} Plasma

100%

Knizikevičius R.

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issue 3

478-483

EN

The plasma chemical etching of Si and SiO_{2} in SF_{6}+O_{2} plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and SiO_{2} etching rates. It is found that the reaction probabilities of F atoms with Si atoms and SiO_{2} molecules are equal to ε = (8.75 ± 0.41) × 10^{-3} and ε = (7.18 ± 0.45) × 10^{-5}, respectively. The influence of O_{2} addition to SF_{6} plasma on the etching rate of Si is determined.

2

PeakForce Tapping Technique for Characterization of Thin Organic Passivating Layers

80%

Papis-Polakowska E., Radkowski B., Lesko S., Kaniewski J.

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vol. 125

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issue 4

1056-1060

EN

The PeakForce Tapping technique was used for study of GaAs and GaSb surfaces treated by hexadecanethiol (HDT) - the sensitive self-assemble compound. The results of both surface morphology control and electrical properties characterization have been presented.

3

Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy

80%

Papis-Polakowska E., Leonhardt E., Kaniewski J.

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vol. 125

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issue 4

1052-1055

EN

(100) GaSb surface was modified by self-assembled superficial layer of organic molecules by wet chemical process. Hexadecanethiol (HDT) was the choice as modifier. The treated GaSb surface, whose quality affects the morphology of the resulting modified GaSb, was investigated by 3D digital microscopy. The structural study were carried out quickly, non-destructively and comprehensively with using the next generation 3D HIROX KH-8700 Digital Microscope.

4

LT-InGaAs Layer Grown for Near Surface SESAM Application

70%

Jasik A., Muszalski J., Kosmala M., Pierściński K.

Acta Physica Polonica A

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2009

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vol. 116

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issue S

S-56-S-59

EN

We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.

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4 Acta Physica Polonica A

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2 Kaniewski J.

2 Papis-Polakowska E.

1 Jasik A.

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1 Kosmala M.

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1 Lesko S.

1 Muszalski J.

1 Pierściński K.

1 Radkowski B.

Simulations of Si and SiO_{2} Etching in SF_{6}+O_{2} Plasma

PeakForce Tapping Technique for Characterization of Thin Organic Passivating Layers

Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy

LT-InGaAs Layer Grown for Near Surface SESAM Application