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1

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

100%

Łukasiewicz M., Wójcik-Głodowska A., Guziewicz E., Jakieła R., Krajewski T., Łusakowska E., Paszkowicz W., Minikayev R., Kiecana M., Sawicki M., Godlewski M., Wachnicki Ł., Szczepanik A.

Acta Physica Polonica A

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2008

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vol. 114

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issue 5

1235-1240

EN

In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T_s=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.

2

Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition

100%

Łukasiewicz M., Cabaj A., Godlewski M., Guziewicz E., Wittlin A., Jaworski M., Wołoś A., Wilamowski Z.

Acta Physica Polonica A

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2011

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vol. 120

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issue 5

911-913

EN

Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.

3

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

100%

Prażmowska J., Korbutowicz R., Wośko M., Paszkiewicz R., Kovač J., Srnanek R., Tłaczała M.

Acta Physica Polonica A

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2009

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vol. 116

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issue S

S-123-S-125

EN

Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.

4

(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties

100%

Łukasiewicz M., Witkowski B., Wachnicki Ł., Kopalko K., Gierałtowska S., Wittlin A., Jaworski M., Guziewicz E., Godlewski M.

Acta Physica Polonica A

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2011

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vol. 120

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issue 6A

A-34-A-36

EN

ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.

5

ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution

100%

Łukasiewicz M., Witkowski B., Godlewski M., Guziewicz E., Sawicki M., Paszkowicz W., Łusakowska E., Jakieła R., Krajewski T., Kowalik I., Kowalski B.

Acta Physica Polonica A

|

2009

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vol. 116

|

issue 5

921-923

EN

We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.

6

Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

100%

Kowalik I., Guziewicz E., Kopalko K., Yatsunenko S., Godlewski M., Wójcik A., Osinniy V., Krajewski T., Story T., Łusakowska E., Paszkowicz W.

Acta Physica Polonica A

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2007

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vol. 112

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issue 2

401-406

EN

ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.

7

Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy - Growth and Characterization

88%

Wójcik A., Kopalko K., Godlewski M., Łusakowska E., Paszkowicz W., Dybko K., Domagała J., Szczerbakow A., Kamińska E.

Acta Physica Polonica A

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2004

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vol. 105

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issue 6

667-673

EN

Recently we demonstrated growth of monocrystalline ZnO films by atomic layer epitaxy in the gas flow variant using inorganic precursors. In this study, we discuss properties of ZnO films grown with organic precursors. Successful Mn doping of the ZnO films during the growth was achieved using the Mn-thd complex. Secondary ion mass spectroscopy and X-ray investigations reveal the contents of Mn up to about 20% of the cationic component.

8

Surface Electronic Properties of Fe Nanoparticles on c(2×2)-N/Cu(001)

88%

Getzlaff M., Bode M., Wiesendanger R.

Acta Physica Polonica A

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2003

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vol. 104

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issue 3-4

327-335

EN

We prepared nanoscaled particles consisting of ferromagnetic material on a nanostructured template. This nanolithographic procedure allows to fabricate high-density magnetic nanodots in a highly ordered way. For this purpose, Fe particles were grown on the c(2×2)-N/Cu(001) surface which exhibits a checkerboard-like structure. Scanning tunneling spectroscopic measurements demonstrate that the electronic properties of the areas with deposited material are identical to clean copper. Fe nanoparticles on the reconstructed patches show a significantly different electronic behavior. These observations directly hint to a covering of iron with copper on the clean surface.

9

Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy

88%

Wójcik A., Kiecana M., Kopalko K., Godlewski M., Guziewicz E., Yatsunenko S., Łusakowska E., Minikayev R., Paszkowicz W., Świątek K., Wilamowski Z., Sawicki M., Dietl T.

Acta Physica Polonica A

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2005

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vol. 108

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issue 5

915-921

EN

Magnetic, structural, and optical properties of ZnMnO films grown with atomic layer epitaxy are discussed. Atomic layer epitaxy films were grown at low temperature using organic zinc and manganese precursors. From magnetometry and electron spin resonance investigations we conclude that lowering of a growth temperature significantly limits formation of Mn precipitates and inclusions of different foreign phases of manganese oxides to ZnMnO host.

Refine search results

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties

ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution

Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy - Growth and Characterization

Surface Electronic Properties of Fe Nanoparticles on c(2×2)-N/Cu(001)

Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy