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Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

100%
Datsenko L., Khrupa V., Krasulya S., Misiuk A., Härtwig J., Surma B.
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EN
The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
2
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Calculations of RHEED and RHEPD Rocking Curves for Growing Surfaces of Germanium

80%
Mitura Z.
Acta Physica Polonica A
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2016
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vol. 130
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issue 4
1134-1136
EN
Reflection high energy electron diffraction is a popular technique to characterize arrangements of atoms near a surface. However, Japanese researchers recently demonstrated experiments in the same geometry, however, conducted using positrons. In this context, detailed comparisons of basic results expected for diffractions of electrons and positrons seem to be interesting. Subsequently, in the current work the growth of single atomic layers of Ge on the Ge(001) substrate is assumed and intensities of reflected beams for electrons and positrons are computed by using dynamical diffraction theory for the case of the off-symmetry azimuth. Shapes of respective theoretical rocking curves are analyzed and then the features of intensity oscillations expected during the regular, continuous deposition of the material are discussed.
3
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Formation of Submicron n^{+}-Layers in Silicon Implanted with H^{+}-Ions

80%
Pokotilo Y., Petukh A., Giro A., Węgierek P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
129-132
EN
Formation of submicron n^{+}-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of n^{+}-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ E_1 = 2.3 eV, the pre-exponential factor τ_{01} = 9.1 × 10^{-17} s, the ultimate concentration N_{01} = (1 ± 0.1) × 10^{16} cm^{-3}; Δ E_2 = 1.4 eV, τ_{02} = 4.2 × 10^{-9} s, N_{02} = (3 ± 0.1) × 10^{16} cm^{-3}. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
4
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The Inelastic Mean Free Path οf Electrons. Research in Budapest, Warsaw, Wrocław and Clermont-Ferrand. Brief History and New Results

80%
Gergely G., Gurban S., Menyhard M., Jablonski A., Zommer L.
Acta Physica Polonica A
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2008
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vol. 114
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issue S
S-49-S-58
EN
The inelastic mean free path of electrons (IMFP) is an important material parameter for description of electron transport processes in solids. This parameter is particularly useful for quantifying the electron spectroscopies, in particular Auger electron spectroscopy, X-ray photoelectron spectroscopy, electron energy loss spectroscopy and elastic peak electron spectroscopy. In this work, a brief overview of the IMFP determination is presented. Generally, there are two groups of methods to determine the IMFP: (i) calculations using the theoretical model based on the experimental optical data, and (ii) calculations using theory relating the IMFP and the measured probability elastic electron backscattering from solids. Major advances in the development of the second group of methods were made in three laboratories; these advances are reviewed here. The elastic backscattering probability, in absolute or relative units, can be conveniently evaluated from the elastic peak intensity. However, much effort is needed to develop the theory for calculating the IMFP, which typically involves the Monte Carlo simulations of electron trajectories in solids. Presently, this theory and typical procedures of the spectra processing are implemented in the software package EPESWIN developed by Jablonski. In recent years, much attention is devoted to the phenomenon of the electron energy losses in the surface region of solids. Reliability of the theory of elastic backscattering is distinctly improved if this effect is taken into account.
5
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Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering

80%
Průša S., Kolíbal M., Bábor P., Mach J., Šikola T.
Acta Physica Polonica A
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2007
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vol. 111
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issue 3
335-341
EN
In the paper the design and application of a time-of-flight low energy ion scattering instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of time-of-flight low energy ion scattering to analyse near-to-surface layers of thin films prepared both ex situ and in situ. It is shown that the broadening of peaks in time-of-flight low energy ion scattering spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.
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