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Characterization of Sn Films on Silicon by Slow Positron Implantation Spectroscopy

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Nancheva N., Docheva P., Anwand W., Brauer G.
Acta Physica Polonica A
|
2001
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vol. 99
|
issue 3-4
435-440
EN
Sn films grown on silicon substrate by d.c. magnetron sputtering have been investigated by slow positron implantation spectroscopy. As the substrate bias is one of the most important factors affecting the structure of a sputtered film, films grown at various substrate bias (+80 V, 0 V, -80 V) are compared and their properties are discussed.
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