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Photoelectromagnetic Investigations of Graphene

100%
Nowak M., Solecka B., Jesionek M.
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vol. 126
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issue 5
1104-1106
EN
The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices.
2
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In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper

100%
Binder J., Stępniewski R., Strupiński W., Wysmołek A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
360-363
EN
We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
3
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Optical and Electrical Studies of Graphene Deposited on GaN Nanowires

100%
Kierdaszuk J., Kaźmierczak P., Drabińska A., Wysmołek A., Korona K., Kamińska M., Pakuła K., Pasternak I., Krajewska A., Żytkiewicz Z.
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vol. 126
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issue 5
1087-1089
EN
In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.
4
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Optical Characterization of Graphene and Highly Oriented Pyrolytic Graphite

100%
Kostić R., Mirić M., Radić T., Radović M., Gajić R., Popović Z.
Acta Physica Polonica A
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2009
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vol. 116
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issue 4
718-721
EN
We present a symmetry analysis of allowed infrared and Raman modes in graphene and highly oriented pyrolytic graphite. Surface structure for highly oriented pyrolytic graphite is examined using atomic force microscopy. As experimental tools, we used infrared spectroscopic ellipsometry in order to investigate the pseudodielectric function of highly oriented pyrolytic graphite in the mid-infrared range (500-7000 cm^{-1}) and Raman spectroscopy to investigate the influence of layers number decrease. As a result, we propose a method for an experimental verification of graphene.
5
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ESR Spectroscopy of Graphene with Adsorbed NaCl Particles

100%
Karpierz E., Drabińska A., Bożek R., Kaźmierczak P., Wysmołek A., Kamińska M., Strupiński W.
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vol. 126
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issue 5
1187-1189
EN
Due to its peculiar properties graphene is a good candidate for sensor materials. Therefore, it is important to study influence of different fluids on graphene layer. The presented studies showed pinning of NaCl microcrystals to graphene surface after immersing graphene in NaCl solution and subsequent careful rinsing with distilled water. The atomic force microscopy images revealed presence of many NaCl-related structures over 100 nm high on graphene surface. The electron spin resonance spectrum for magnetic field perpendicular to the graphene layer consisted of several lines originating from NaCl. The pinning of NaCl microcrystals resulted in increase of electron scattering, as confirmed by the Raman spectroscopy (the increase of intensity of D and D' bands) and weak localization measurement (the decrease of coherence length).
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