A two-photon process leading to coherent transitions between the two circularly polarized exciton states in a quantum dot is studied. It is shown that optical flipping of the exciton polarization is possible with picosecond laser pulses. The process is closely related to two-photon Rabi oscillations of a biexciton but it is much more stable against shifts of the laser frequency.
Photo- and contactless electroreflectance spectroscopies were applied to study optical properties and electronic structure of GaAs/AlAs superlattice systems with embedded InAs quantum dots. The observed interband transitions related to the quantum dot ground and excited states, as well as optical transitions in the combined system formed by the InAs wetting layer and GaAs/AlAs superlattice are discussed.
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.
We present microluminescence investigations of self-assembled CdTe/ZnTe quantum dots. The dots proprieties resulting from our studies are: values of optical in-plane anisotropy parameters (electron - heavy hole exchange splitting and orientation of anisotropy) and value of effective Lande factor. Parameters giving information about in-plane anisotropy possess random distribution of values with the exchange splitting from 0 to 240 μeV. The effective Lande factor values for our dots are around g^*=-3.2 with a scatter of about 18%. Some PL lines exhibit sudden jumps of energetic position, related to variation of the charge state in their neighborhood.
Microphotoluminescence of low-density GaN/Al_xGa_{1-x}N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
Static and dynamic properties of electron spins in self-assembled (In,Ga)As/GaAs quantum dots which contain on average a single electron per dot were studied by pump-probe Faraday rotation. Examples given here are the g-factor tensor components as well as the dephasing time T*_2 within a dot ensemble.
Microphotoluminescence of low-density GaN/Al_{x}Ga_{1-x}N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine structure splitting ranges from 10 μeV to 100 μeV and correlates with the X energy. The polarization axis of the fine structure splitting is well oriented along [110] crystallographic direction of a substrate. The orientation is attributed to the elongation of GaAlAs/AlAs quantum dots in the [110] direction of the substrate.
We investigate the influence of an electric field on the optical properties of single quantum dots. For sample made of III-V compounds micron-size electro-optical structures were produced in order to apply an electric field in the dot plane. For several individual dots lines significant variations of the anisotropic exchange splitting with the field were observed. On sample made of II-VI compounds we demonstrate the influence of electric field fluctuations on the luminescence of a single quantum dot.
The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
We theoretically study the optical properties and the electronic structure of highly elongated quantum dots (quantum dashes) and show how geometrical fluctuations affect the excitonic spectrum of the system. The dependence of the absorption intensities on the geometrical properties (depth and length) of the trapping center in a quantum dash is analyzed and the dependence of the degree of the linear polarization on these geometrical parameters is studied.
In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the selective polarization properties of such structures. It shows that they are not a straightforward consequence of the geometry but are related to it via valence subband mixing. Our model allows us to predict the degree of polarization dependence on the in-plane dimensions of investigated structures assuming a predominantly heavy hole character of the valence band states, simplifying the shape of confining potential and neglecting the influence of the out-of-plane dimension. The energy dependence modeling reveals the importance of different excited states in subsequent spectral ranges leading to non-monotonic character of the degree of polarization. The modeling results show good agreement with the experimental data for an ensemble of InAs/InP quantum dashes for a set of realistic parameters with the heavy-light hole states separation being the only adjustable one. All characteristic features are reproduced in the framework of the proposed model and their origin can be well explained and understood. We also make some further predictions about the influence of both the internal characteristics of the nanostructures (e.g. height) and the external conditions (excitation power, temperature) on the overall degree of polarization.
In this paper we present optical studies of CdTe quantum dots formed using Zn-induced reorganization. The pattern of quantum dot photoluminescence lines is found to be similar to typical results reported for quantum dots grown with other techniques, although the positively charged exciton line is relatively more pronounced. Also the energy spacing between biexciton and exciton lines is found to be larger than in typical results. Zn-induced reorganization results in quantum dots density higher by an order of magnitude than in Te-induced quantum dots.
We report correlation and cross-correlation continuous wave measurements in II-VI quantum dots grown by molecular beam epitaxy. Combination of spectral selection, saturation measurements and good temporal resolution allowed us to see an antibunching effect on photons from radiative recombination of excitons in a single CdTe/ZnTe quantum dot, as well as cross-correlation within the biexciton (X_{2})-exciton (X) radiative cascade from the same dot. We discuss the results of our experiments in terms of a model of excitonic multitransitions.
Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
We study experimentally and theoretically excitonic recombination processes in CdTe/ZnTe quantum dots. The single quantum dot photoluminescence spectrum was observed and emission lines from X, X^-, X^+ and 2X excitonic states were identified. Experimental results were analysed in the theoretical model based on the effective mass approximation. Numerical calculations of energy positions and recombination probabilities of X, X^-, X^+ and 2X were performed. Computed results reproduce correctly the order and relative positions of emission lines and ratios of radiative lifetimes.
We study theoretically the nonlinear four-wave mixing response of an ensemble of coupled pairs of quantum dots (quantum dot molecules). We discuss the shape of the echo signal depending on the parameters of the ensemble: the statistics of transition energies and the degree of size correlations between the dots forming the molecules.
We discuss possible mechanisms of quantum dot population control. A set of experiments, including time-resolved photoluminescence, single photon correlations, excitation correlation, and photoluminescence excitation is used to determine the actual mechanism under non-resonant and quasi-resonant regime.
We present studies of resonant excitation of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation measurements revealed existence of sharp resonances, common for photoluminescence lines attributed to different quantum dot charge states. We conclude from the ensemble of photoluminescence and photoluminescence excitation results that we observe energy transfer in coupled quantum dot pairs.
The optical excitonic Aharonov-Bohm effect in type-I three-dimensional (In,Ga)As/GaAs nanorings is theoretically explored. The single-particle states of the electron and the hole are extracted from the effective mass theory in the presence of inhomogeneous strain, and an exact numerical diagonalization approach is used to compute the exciton states and the oscillator strength f_{x} for exciton recombination. We studied both the large lithographically-defined and small self-assembled rings. Only in smaller self-assembled nanorings we found optical excitonic Aharonov-Bohm effect. Those oscillations are established by anticrossings between the optically active exciton states with zero orbital momentum. In lithographically defined rings, whose average radius is 33 nm, f_{x} shows no oscillations, whereas in the smaller self-assembled nanoring with average radius of 11.5 nm oscillations in f_{x} for the ground exciton state are found as function of the magnetic field that is superposed on a linear dependence. These oscillations are smeared out at finite temperature, thus photoluminescence intensity exhibits step-like variation with magnetic field even at temperature as small as 4.2 K.
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