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Acta Physica Polonica A
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1994
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vol. 86
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issue 3
375-383
EN
Gold films of thicknesses 150-300 Å were deposited on quartz substrata using vacuum evaporation technique. Spectrophotometric measurements of transmission T and reflection R at normal incidence were performed in the range 0.4-3.0 µm. The real and imaginary parts of the complex refractive index ñ were determined using a developer algorithm bashed on Murmann's exact equations. The accuracy in the determined n and k was found to be ±6.0% and ±1.6%, respectively. The dispersion curve of n slowed an anomalous dispersion in the visible region characterized by a peak at λ = 0.840 µm. The dielectric constants were calculated and presented. The Drude model parameters ω_{p} and ω_{τ} and d.c. conductivity were determined and compared. The results showed that such parameters could be obtained from free-electron analysis for the near IR experimental results and the intraband transition contributes significantly to the dielectric functions.
2
100%
EN
Thin layers of Au with the thickness of several nanometers were prepared on a semi-insulating GaAs substrate. The layers' thickness was determined by ellipsometry. THz time-domain spectroscopy was applied to determine a complex index of refraction of thin Au layers. The obtained results allow for a more precise modeling of the performance of semiconductor devices at THz frequencies.
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issue 4
659-664
EN
The ZnO thin films were prepared from zinc acetate dihydrate as main precursor by using sol-gel method and deposited by drainage and dip coating technique. Four different routes and coating techniques were used for the preparation of samples. The morphology, optical, and structural properties of the sol-gel made ZnO thin films were studied with respect to the preparation of sol-gel route, drainage and dip coating technique. The microstructure of the ZnO thin films and the powders were analyzed by X-ray diffraction. The ZnO thin films prepared in this study were amorphous while its powders were polycrystalline with various diffraction peaks in the X-ray diffraction patterns. The morphology of the film was examined by using scanning electron microscopy. The surface morphology of the ZnO thin films strongly depends on preparation route and deposition technique. The optical characteristics of the samples were obtained by using UV-Visible spectrophotometer at 200-900 nm wavelength. The optical constants (refractive index, extinction coefficient etc.) of the ZnO thin films depend on preparation conditions. The photoluminescence spectra of the ZnO films show the band-edge and sub-band transitions.
EN
We present theoretically the characterization of 100 nm SiO_2 thin film using spectroscopic rotating polarizer analyzer ellipsometer in which the two elements are rotating synchronously in opposite directions with the same angular speed. The proposed sample consists of air (ambient)/SiO_2 (thin film)/Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200-800 nm. The results are compared with the proposed thickness and with the published values for SiO_2 optical constants.
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