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1
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Effects of Alkali Metallization on the Luminescence Degradation of Porous Silicon

100%
Kayahan E., Özer M., Oral A.
Acta Physica Polonica A
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2012
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vol. 121
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issue 1
281-283
EN
In this study, change in the intensity and stability of photoluminescence obtained by porous silicon were investigated with illumination time and metallization state. The porous silicon samples were metallized by immersing into solutions containing 3 mM LiNO_3, KNO_3 and NaNO_3 metal salts using immersing plating method. The surface bond configurations of porous silicon were monitored by the Fourier transmission infrared spectroscopy and the results showed that the surfaces of the samples were oxidized after the metallization. The photoluminescence intensity increased after certain critical immersion times and photoluminescence spectrum shifted towards the high energy region after the metallization. Photoluminescence intensity of metallized porous silicon samples was more stable than as-anodized porous silicon samples. The experimental results suggested the possibility that oxygen and/or alkali metal (Li, K and Na) passivation of porous silicon surface could be a suitable way to obtain an efficient and stabilized photoluminescence.
2
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Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

80%
Kato G., Tajima M., Okayama F., Tokumaru S., Sato R., Toyota H., Ogura A.
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vol. 125
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issue 4
1010-1012
EN
We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of ^{16}O¯. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
3
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Fabrication of Si_{1-x}Ge_x Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

80%
Gao K., Prucnal S., Mücklich A., Skorupa W., Zhou S.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
858-861
EN
In our contribution we present the fabrication of Si_{1-x}Ge_x alloy by ion-implantation and millisecond flash lamp annealing. The 100 keV Ge ions at the fluence of 10×10^{16}, 5×10^{16}, and 3×10^{16} cm^{-2} were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the Si_{1-x}Ge_x alloying were accomplished by flash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline Si_{1-x}Ge_x layer was confirmed by the μ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The μ-Raman spectra reveal three phonon modes located at around 293, 404, and 432 cm^{-1} corresponding to the Ge-Ge, Si-Ge and Si-Si in the Si_{1-x}Ge_x alloy vibrational modes, respectively. Due to much higher carrier mobility in the Si_{1-x}Ge_x layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.
4
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Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing

80%
Prucnal S., Shumann T., Skorupa W., Abendroth B., Krockert K., Möller H.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
30-34
EN
Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.
5
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Luminescence of Lanthanides from Xerogels Embedded in Mesoporous Matrices

51%
Gaponenko N.
Acta Physica Polonica A
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2007
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vol. 112
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issue 5
737-749
EN
The report summarizes peculiarities of synthesis and luminescence properties of porous silicon, porous anodic alumina and artificial opals with the inclusions of sol-gel derived oxides (xerogels), doped with Er, Tb, and Eu. Origin of strong luminescence of lanthanides from xerogels in mesoporous matrices is discussed.
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