Ζn_{1-x}Mg_{x}Se mixed crystals with x ranging from 0 to 0.56 were obtained by high pressure Bridgman method. It has been found that a phase transition from sphalerite structure to wurtzite one occurs at x = 0.185 ± 0.03. The crystals exhibit blue-violet and yellow-green (depending on x) luminescence in the temperature range from 40 K to room temperature. An attempt has been also made to dope Ζn_{1-x}Μg_{x}Se crystals with Al. The incorporation of Al produces a strong green photoluminescence in the temperature range from 40 K to 300 K but almost completely quenches the near-band-edge emission.
This work deals with the study of the photoluminescence and reflectivity properties of Zn_{x}Mg_{1-x}Se epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn_{x}Mg_{1-x}Se layers grown on GaAs and ZnTe substrates are dominated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep increase in the linewidth with an increase in Mg concentration are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn_{0.78}Μg_{0.22}Se.
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