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EN
This paper presents the results of investigations of the dielectric properties of NH_2(CH_3)_2Al(SO_4)_2×6H_2O crystals performed in a wide frequency range. In particular, the temperature and frequency dependences of the dielectric permittivity were measured in the region of ferroelectric phase at different rates of temperature change. The thermal dipole relaxation with a critical slowing-down at T_{c1} was observed at comparatively low frequencies of measuring field. The relaxation connected with the domain freezing takes place at still lower frequencies (below 100 kHz) and was found to be strongly dependent on the rate of the temperature change. It was shown that deuteration results in a noticeable change of the parameters characterising this process including the temperature of domain wall freezing.
EN
Polycrystalline [4-NH_2C_5H_4NH] SbCl_4 and [4-NH_2C_5H_4NH] SbCl_6 have been investigated by proton NMR methods between 120 K and 370 K under hydrostatic pressure of 0.1 and 520 MPa. Reduction in the dipolar second moment is interpreted in terms of cation reorientation. Activation energies characterizing the motion increase with increasing pressure.
EN
In this study, the effect of B₂O₃ addition on the sintering behavior of 0-5-10% ZrO₂ doped barium titanate based microwave dielectric ceramics were investigated. For this purpose, the powder mixtures consisting of BaCO₃, TiO₂ and ZrO₂ were prepared by ball milling technique in alcohol using ZrO₂ balls at 200 cycle/min for 20 h. The prepared powders were calcined at 900°C for 2 h. Produced powders were mixed 0.5% B₂O₃ and 5% PVA and pressed as green body under the pressure of 100 MPa. The disc-shaped die-pressed samples were sintered at 1250°C, 1350°C and 1450°C for 4 h. X-ray diffraction analysis showed that the main phases formed in the sintered samples are BaTiO₃ and Ba(Ti_{1-x}Zr_{x})O₃. The scanning electron microscope (SEM) and energy-dispersive X-ray spectroscopy (EDS) were used to investigate microstructure of the sintered samples. The bulk densities of the sintered samples increased with the addition of B₂O₃ content due to the low number of pores trapped between the grains.
EN
For the first time the thermal desorption of H_2, N_2, O_2 and CO_2 is presented for antimony sulfoiodide (SbSI) xerogel made up of large quantity nanowires. The desorption has been observed near ferroelectric phase transition established at T_{c}=293.0(2) K. The Sievert measurements have shown that the hydrogen uptake is linear function of H_2 pressure (when p < 1.1×10^5 Pa). The hydrogen storage density in SbSI gel amounted 1.24× 10^{-2} wt% (for p = 1.08×10^5 Pa at room temperature).
EN
A combination of infrared and inelastic incoherent neutron scattering spectroscopies with the density functional theory and semi-empirical calculations was applied to propose an assignment of the vibrational spectra of 4-aminopyridine chloroantimonate(IV).
EN
We report on preparation and electrical characterization of the epitaxial BaTiO₃ (BTO), BiFeO₃ (BFO) thin films and BFO/BTO bi- and multilayers, grown on (001) SrTiO₃ (STO) and (LaAlO₃)_{0.3}(Sr₂TaAlO₆)_{0.7} (LSAT) substrates. The ferroelectric properties were characterized using the electric force microscopy method to image and switch the electric domains. This fabrication process opens the routes towards wide study of magnetoelectric effect in complex oxide heterostructures.
7
80%
EN
Crystallization of Li₂O-7GeO₂ glass was carried out on heating, simultaneously differential scanning calorimetry and electric properties were studied. Morphology of the phase states obtained at glass devitrification was examined by atomic force microscopy. It was shown that amorphous phase of Li₂O-7GeO₂ was crystallized in stages through the intermediate state with increased conductivity σ . In the intermediate state the sample volume was occupied by nanometer-sized nuclei with ordered structure surrounded by internuclear amorphous medium. Complete glass crystallization occurred through transformation of nanometer-sized nuclei into micrometer-sized crystallites and was accompanied by a sharp and irreversible decrease of conductivity. Atomic force microscopy of the samples heat-treated in different ways showed that Li₂O-7GeO₂ glass crystallization was suppressed near the surface and mainly proceeded within the sample bulk. Charge transfer in amorphous, nanocrystalline intermediate and polycrystalline phases of Li₂O-7GeO₂ was associated with motion of the weakly bound Li ions.
EN
Ba(Ti_{1-x}Zr_{x})O₃ (x=0÷0.3) ceramics were prepared by the standard solid state reaction method and were sintered at 1450°C for 4 h. The structural and dielectric properties of the samples were studied. The phases formed in the ZrO₂ doped BaTiO₃ were tetragonal and of cubic symmetry. Increase in ZrO₂ content in the BaTiO₃ caused to increase of the lattice parameter and crystallite size of the perovskite structure. The evolution of the Raman spectra was studied for various compositions and the spectroscopic signature of the corresponding phase was determined. The scanning electron microscope was used to investigate the microstructure and surface morphology of the sintered samples. Scanning electron microscope observations revealed enhanced microstructural uniformity and retarded grain growth with increase of ZrO₂ content. Dielectric characteristics of ZrO₂ doped barium titanate were studied using a Hioki 3532-50 LCR meter in the frequency range of 1 kHz-1 MHz. It is found that the dielectric constant (ε_{r}) increases while the dielectric loss (tan δ) decreases with increase in zirconium oxide content (x<0.3).
EN
This paper presents the results of investigations of the radiation effects in NH_2(CH_3)_2Al(SO_4)_2×6H_2O crystals doped with chromium. On the basis of absorption spectroscopy and resonance Raman scattering study it has been shown that comparatively low doses of radiation first of all causes recharging of Cr^{3+} on Cr^{4+} ions. Besides, the processes of dehydrogenation and the changes in arrangement of the hydrogen bond network were observed. These changes are followed by distortion of the complexes bonded by such a type of bonds.
EN
SrBi_2Nb_2O_9 (SBN) is a bismuth layered perovskite compound, due to its relatively high Curie temperature, has potential application as high ceramic transducer. Also, it is an attractive ferroelectric material that is being considered in non-volatile random access memory cells. Present article describes preparation, dielectric, impedance and modulus characteristics. Temperature and frequency dependence of dielectric permittivity, impedance and electric modulus of barium strontium bismuth niobate (Ba_{0.1}Sr_{0.9}Bi_2Nb_2O_9, BSBN) have been studied in the range of 35-590°C and 45 Hz-5 MHz, respectively. The structural analysis of compound revealed orthorhombic at room temperature. Complex impedance Cole-Cole plots are used to interpret the relaxation mechanism. These plots shows the relaxation behavior as non-Debye type. By using the Cole-Cole plots grain and grain boundary contributions towards conductivity have been estimated. From electrical modulus formalism polarization and conductivity relaxation behavior in BSBN have been discussed. DC and AC conductivity measurements have been performed on BSBN.
EN
This paper presents the results of investigations of the temperature dependence of heat capacity and dielectric dispersion in the vicinity of ferroelectric-ferroelastic phase transition of dimethylammonium metal sulphate hexahydrate crystals DMAAl_{1-x}Cr_{x}S. In particular, it is shown that the isomorphous substitution of metal ion noticeably changes the temperature of phase transition and parameters of the fundamental ferroelectric dispersion observed around T_{c1}. These changes are explained in terms of clusters sizes and dynamics in the framework of order-disorder type phase transition mechanism.
12
Content available remote

Fabrication of SbSI Photonic Crystals

80%
EN
Semiconducting ferroelectric antimony sulfoiodide (SbSI) photonic crystals were fabricated. The SiO_{2} nanospheres were synthesized and gravity sedimented to obtain opal matrices. These opals were infiltrated with melted SbSI and etched in HF acid to produce inverted SbSI opals.
EN
Electrooptic and dielectric measurements were done for B phases of two banana-shaped homologues 1,3-phenylene bis{4-[(4-nonylo-xy-benzoyl)sulfanyl]benzoate (9OSOR) and 1,3-phenylene bis{4-[(4-dodecylo-xy-benzoyl)sulfanyl]benzoate (12OSOR). Polarizing microscopy allowed to identify B_{1} phase for 9OSOR and B_{2} phase for 12OSOR on the basis of texture observation. Spontaneous polarization measurements were performed using reversal current method. The current response to applied triangular voltage shows that B_{1} phase is a ferroelectric and B_{2} phase - antiferroelectric one for which two well separated peaks were observed. Polarization for phase B_{1} of 9OSOR is rather small and its temperature dependence is unusual for ferroelectric liquid crystals - it increases with temperature. Spontaneous polarization for B_{2} phase of 12OSOR compound is of about 600 nC/cm^{2}. Dielectric spectra measured with bias field for B_{2} phase of 12OSOR show two well separated relaxation processes. In the low frequency range the relaxation process is connected with fluctuations of ferroelectric domains. The relaxation process in the high frequency range appearing also without bias field is connected with molecular reorientation. The dielectric spectra measured for B_{1} phase of 9OSOR with and without bias voltage showed only one dielectric relaxation process connected with molecular reorientation around the short axis.
14
Content available remote

Electrical Charge Transfer in Complex Oxides

80%
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issue 1
150-154
EN
The electrophysical properties (temperature-frequency dependence of conductivity and dielectric constant, current of depolarization) of complex oxide single crystals (Ca-Ga-Ge-garnet, Ca-Ga-germanate, Pb-, Ca-, Cd-tungstates) are analyzed. The experimental results for different crystallographic axes were obtained in the frequency range 10-10^{5} Hz and temperature range 290-650 K. The main parameters of conductivity and depolarization currents are determined. The nature of polarization charge induced by applied external field is discussed using the model of polarization at hopping exchange of charge between complex dipolar defects and space-inhomogeneous distribution of charge in the sample. Existence of small polarons in the crystals is considered.
Open Physics
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2003
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vol. 1
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issue 1
91-99
EN
The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients dh(i) of Sn2P2S6 crystals has been studied. The hydrostatic piezoelectric coefficients dh(1) and d′h(3), were measured, dh(1)=(244±3) pC/N and d′h(3)=(92±1) pC/N. The hydrostatic piezoelectric coefficient d h(3) for orthogonal axis system was calculated to be dh(3)=(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d h(1) equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d h)mean corresponding to randomly oriented Sn2P2S6 grains in a poled composite has been calculated to be (d h)mean=136 pC/N.
EN
The complex impedance spectra Z*(ω) were studied for as-grown and annealed in air Na_{0.5}Bi_{0.5}TiO₃ single crystals. Experimental data showed that annealing significantly increased impedance and led to appearance of low frequency Z* relaxation. The detected relaxation processes were associated with charge transfer within the regions with initial and reduced after annealing concentration of oxygen vacancies.
EN
Barium titanate, BaTiO_3 ceramic powders were prepared by mechanochemical synthesis and by the Pechini method. A powder mixture of BaO and TiO_2 was treated in a planetary ball mill in an air atmosphere for up to 1 h, using zirconium oxide vial and zirconium oxide balls as the milling medium. After 60 min BaTiO_3 phase was formed. In both ways BaTiO_3 ceramics were sintered after 2 h on 1300°C without pre-calcinations step. The heating rate was 10°C min^{-1}. The formation of phase and crystal structure of BaTiO_3 was approved by X-ray diffraction analysis and the Raman spectroscopy. The morphology and microstructure of obtained powders were examined by scanning electron microscopy method. Sharp phase transition from ferroelectric to paraelectric state was observed. The hysteresis loop is very well performed with regular sharp characteristic of ferroelectric materials.
18
80%
EN
The electronic structure of different phases of BiFeO₃ were calculated by using density functional theory. The DFT+U and semilocal Tran-Blaha modified Becke-Johnson potential were used. DFT+U results are in good agreement with previous calculations. Our results have shown that in case of R3c, Pnma, Pn2₁a BiFeO₃ has G-antiferromagnetic ordering and C-antiferromagnetic in case of Cm space group. In all calculated structures BiFeO₃ is a semiconductor with the band gap: 2.26 eV (2.27 eV) for R3c, 1.91 eV (1.66 eV) for Pnma, 1.99 eV (2.18 eV) for Pn2₁a and 2.09 eV (2.55 eV) for Cm within DFT+U (Tran-Blaha modified Becke-Johnson).
EN
First principles calculations of band energy, density of states and dielectric function of K_{1.75}(NH₄)_{0.25}SO₄ single crystals in Pnma structure is performed in the framework of density functional theory. In order to describe the exchange-correlation interaction the general gradient approximation and local density approximation are used. Character and genesis of main energy bands of the crystal are discussed and comparison with data set for K₂SO₄ isomorphic crystal performed. The influence of partial isomorphic substitution K→ NH₄ found itself mainly in altering the bottom of conduction band and decrease of band gap value. From the dielectric functions dependences, the refractive indices dispersion and absorption coefficient spectra are deduced. Obtained refractive indices satisfactorily agree with experimental data in the visible spectrum region.
20
80%
Acta Physica Polonica A
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2000
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vol. 98
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issue 3
195-201
EN
Two-dimensional hole and electron gases in wurtzite GaN/Al_{x}Ga_{1-x}N/GaN heterostructures areinduced by strong polarization induced effects. The sheet carrier concentration and the confinement of the two-dimensional carrier gases located close to one of the AlGaN/GaN interfaces are sensitive to a high number of different physical properties such as polarity, alloy composition, strain, thickness, and doping. We have investigated the structural quality, the carrier concentration profiles, and electrical transport properties by a combination of high resolution X-ray diffraction, Hall effect, and C-V profiling measurements. The investigated heterostructures with N- and Ga-face polarity were grown by metalorganic vapor phase or plasma induced molecular beam epitaxy covering a broad range of alloy compositions and barrier thickness. By comparison of theoretical and experimental results we demonstrate that the formation of two-dimensional hole and electron gases in GaN/AlGaN/GaN heterostructures both rely on the difference of the polarization between the AlGaN and the GaN layer. In addition the role of polarity on the carrier accumulation at different interfaces in n- and p-doped heterostructures will be discussed in detail.
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