Using pulsed laser deposition we have grown films of La_{2-x}Sr_xCuO_4 with x in close vicinity of the superconductor-insulator transition, x=0.051 and x=0.048, on SrLaAlO_4 substrates, and of different thickness d (from 25 nm to 250 nm). The X-ray diffraction shows that for each d the films grow with variable degree of compressive in-plane strain, with the largest strain achieved in thinnest films. The resistivity measurements show strong enhancement of superconductivity with increasing strain, so that the onset of superconductivity at temperature as high as 27 K is observed. With increasing strain the character of resistivity changes from the insulating to metallic.
We study the superconductor-insulator transition in Si/Nb/Si trilayers, in which the thickness of Si is fixed at 10 nm, and the nominal thickness of Nb changes in the range between d = 20 nm down to d = 0.3 nm. The transmission electron microscopy indicates the formation of the mixed Nb-Si layer for small d. Both the thickness-induced, and the magnetic-field induced superconductor-insulator transition is observed. The crossing point of the isotherms at the critical field B_{c} decreases with decreasing d, and it is T-independent at temperatures below 300 mK. At larger fields the weak peak in magnetoresistance appears in some of the films.
In the presented work, we investigated the superconducting boron doped diamond polycrystalline film prepared by chemical vapor deposition by means of scanning tunneling microscopy/spectroscopy. Differential conductance spectra measured at various temperatures were used to obtain the values of superconducting critical temperature and energy gap. Comparing various theoretical models fitted to the differential conductance spectra measured at 0.5 K suggests weak pair breaking. However, this cannot account for the high 2Δ/(k_{B}T_{C}) ratio, which therefore indicates strong coupling.
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