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Intrinsic Spin Hall and Spin Nernst Effects in Single-Layer Graphene: Tight-Binding vs. Effective Model

100%
Dyrdał A., Barnaś J.
Acta Physica Polonica A
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2012
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vol. 121
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issue 5-6
1198-1200
EN
We calculate topological contributions to the spin Hall and spin Nernst effects due to intrinsic spin-orbit interaction in a single-layer graphene. To describe electronic spectrum of the graphene we have assumed the k·p model as well as the full tight-binding Hamiltonian. The corresponding contributions to the spin Hall and spin Nernst effects have been determined using the linear response theory and Green function formalism.
2
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Spin Hall Conductivity of a Two-Dimensional Electron Gas with Random Rashba Field

100%
Dyrdał A., Rataj M.
Acta Physica Polonica A
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2015
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vol. 127
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issue 2
499-501
EN
Spin Hall effect in a two-dimensional electron gas with uniform and random components of the Rashba spin-orbit interaction is considered theoretically. Relaxation time due to scattering on Rashba fluctuations is also calculated. It is shown that the presence of a uniform component of Rashba coupling not only modifies relaxation time, but also suppresses the contribution to the spin Hall conductivity due to random Rashba field.
3
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Chemical Reactions and Electronic Functions of Carbon Cluster Arrays Studied by Scanning Tunneling Spectroscopy and High-resolution Electron Energy Loss Spectroscopy

100%
Kasuya A., Hu C., Suto S., Tohji K., Takahashi H., Czajka R., Wawro A., Nishina Y.
Acta Physica Polonica A
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1998
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vol. 93
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issue 2
317-322
EN
Novel nanometer scale structures have been produced by thermal heating or laser irradiation on the surface of single- and multi-layers of C_{60} and C_{84} on Si. These structures were examined by combined measurements of scanning tunneling spectroscopy and high resolution electron energy loss spectroscopy. The results show specific chemical reactions of substrate with carbon clusters having single- and double-bonded network. Covalent bonds are formed in some of these chemical reactions.
4
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An ab initio Study of a Model of Single Wall GaN Nanotubes with Oxygen and Zinc as Impurities: Structural and Electronic Properties

100%
Rezouali K., Belkhir M.
Acta Physica Polonica A
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2008
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vol. 113
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issue 2
713-722
EN
We report a comprehensive theoretical study of structural and electronic properties of substitutional oxygen and zinc contaminations in a model of single wall GaN nanotubes by means of ab initio supercell calculations. Our investigation yields many interesting results. The following ones deserve to be developed. Oxygen forms a shallow donor in the single wall GaN nanotubes as in bulk GaN polytypes. Its ionization energy is deeper than its counterpart in the bulk wurtzite GaN, so it can be a suitable n-type dopant in high temperature applications. Zinc is a relatively shallow acceptor at gallium site. It behaves as charge carrier trap at nitrogen site. The site preference of zinc impurity depends on the stoichiometry. Zinc at gallium site has small ionization energy, thus it would be an efficient p-dopant in GaN nanotubes unlike in bulk GaN polytypes.
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