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1
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AC-Conductivity of Thin Polycrystalline Tin Dioxide Films

100%
Ksenevich V., Gorbachuk N., Dauzhenka T., Bashmakov I., Poklonski N., Wieck A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
146-147
EN
The electrical properties of polycrystalline tin dioxide films were investigated by impedance spectroscopy in the frequency range 100 Hz-1 MHz at temperatures 4.2 K, 77 K and 300 K. Analysis of the experimental data by means of complex nonlinear least squares method made it possible to divide the contributions of grain bulk and grain boundaries to the conductivity. It was found that at room temperature charge transport processes are mainly determined by the grain volume while at the low temperatures contribution from the grain boundaries to the impedance of the system prevails.
2
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Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

63%
Matsuura H., Morine T., Nagamachi S.
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vol. 125
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issue 4
1017-1020
EN
Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the Fermi-Dirac distribution function. Using the distribution function that accounts for the influence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 10^{19} cm^{-3} and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.
3
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Magnetotransport Study of MBE grown Pb_{1-x}Eu_{x}Se Epilayers

63%
Dobrowolski W., Grodzicka E., Story T., Lambrecht A., Bottner H., Tacke M.
Acta Physica Polonica A
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1996
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vol. 90
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issue 4
759-762
EN
Hall effect and electron conductivity investigations of MBE grown epilayers of Pb_{1-x}Eu_{x}Se (0 ≤ x ≤ 0.06) as a function of temperature and magnetic field are reported. The strong Hall coefficient dependence on the magnetic field was found for p-type samples grown with Se excess. The possible origins of this effect are discussed.
4
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Peculiarities of Deposition Times on Gas Sensing Behaviour of Vanadium Oxide Thin Films

51%
Bagheri Khatibani A., Abbasi M., Rozati S.
Acta Physica Polonica A
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2016
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vol. 129
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issue 6
1245-1251
EN
The importance of vanadium oxide in solid state science as a semiconductor encouraged us to prepare and investigate its microstructure and surface properties related to gas sensing characteristics. Hence, vanadium oxide thin films were deposited by spray pyrolysis method. The prepared films were placed in an electric circuit and the sensing characteristics of these films to ethanol vapors were studied. It was possible to find correlations between nanostructure and electrical properties of the obtained thin films and to optimize conditions of its synthesis. By X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy, the structure of the deposited films was determined. Based on atomic force microscopy results, the fractal analysis showed a decreasing trend of the fractal dimension (the slope of the log (perimeter) vs. log (area)) versus the deposition time. It was found that the film growth and gas response were affected by the deposition time. The operating temperature of the sensor was optimized for the best gas response. In accordance with our findings, the film deposited at the lowest deposition time (20 min) had the highest sensing response to ethanol.
5
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Effect of Zinc Incorporation in CuInS_{2} Thin Films Grown by Vacuum Evaporation Method

51%
Ben Rabeh M., Kanzari M., Rezig B.
Acta Physica Polonica A
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2009
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vol. 115
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issue 3
699-703
EN
Structural, optical and electrical properties of Zn-doped CuInS_2 thin films grown by double source thermal evaporation method were studied. Evaporated thin films were grown from CuInS_2 powder by vacuum evaporation using resistively heated tungsten boats. The element Zn was evaporated from a thermal evaporation source. The amount of the Zn source was determined to be 0-4% molecular weight compared with CuInS_2 source. The effects of Zn on films properties were investigated using X-ray diffraction, optical transmission and reflection spectra. The films were annealed in vacuum at 260°C for 2 h. The Zn-doped samples have band-gap energy of 1.474-1.589 eV. We found that the Zn-doped CuInS_2 thin films exhibit p-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate CuInS_2-based solar cells.
6
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Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures

51%
Wrotek S., Morawski A., Tkaczyk Z., Mąkosa A., Wosiński T., Dybko K., Łusakowska E., Story T., Sipatov A., Péecz B., Grasza K., Szczerbakow A., Wróbel J.
Acta Physica Polonica A
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2004
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vol. 105
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issue 6
615-620
EN
Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm^2 to 100 x 100 μm^2) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
7
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Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

51%
Çiçek Bezir N., Evcin A., Okçu H., Kayali R., Kaleli M., Aldemir D.
Acta Physica Polonica A
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2017
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vol. 132
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issue 3
638-641
EN
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I-V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.
8
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Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

51%
Ksenevich V., Adamchuk D., Odzhaev V., Zukowski P.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
861-863
EN
Tin dioxide films with variable stoichiometric composition were fabricated by means of dc magnetron sputtering followed by a 2-stage annealing process. The structural and electrical properties of tin dioxide films were investigated by means of the Raman spectroscopy and impedance spectroscopy, respectively. It was found that crystallinity and grain size of tin dioxide films increase with the increasing annealing temperature. The most conductive samples were obtained at the annealing temperature 375°C. Increasing of the impedance of films annealed at higher temperatures is explained by decrease of the concentration of oxygen vacancies.
9
Content available remote

Complex Impedance Investigation of Epitaxial LCMO Thin Films

51%
Mateev E., Nurgaliev T., Blagoev B.
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vol. 126
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issue 3
787-790
EN
Epitaxial La_{0.67}Ca_{.33}MnO_3 (LCMO) thin films by off-axis magnetron sputtering were deposited on SrTiO_3 (STO) substrates. Complex impedance measurements (module and phase of the thin film impedance) in frequency range 1-30 kHz are done. Substantial dependence of both: module and phase of the complex surface impedance is observed. The temperature interval scanned is from 77 K to room temperature. The impedance has inductive behavior for temperatures less than the Curie temperature and capacitive for higher temperatures. Reduction of the film thickness from 60 to 30 nm shifts the impedance curves to the lower temperatures.
10
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Spin and Charge Current in a Short Semiconducting Chain of Paramagnetic Ionic Blocks

51%
Lehmann-Szweykowska A., Wojciechowski R., Micnas R.
Acta Physica Polonica A
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2009
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vol. 115
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issue 1
260-262
EN
We deal with the electric current flowing through a short chain of paramagnetic ionic blocks, coupled to metallic electrodes in the serial configuration. An original three-band Hubbard-Anderson Hamiltonian is diagonalised at the level of the single ionic block. A minimal but sufficient set of the latter's four hybridised eigenstates serves as a basis for the determination of the time-ordered temperature-dependent matrix Green functions, in terms of which all the current-voltage (I-V) characteristics can be expressed provided the coupling to the electrodes is weak. The separation of the opposite-spin contributions to the electric current and, consequently, the spin current from the left to right electrode can result from the on-site Coulomb repulsion term of Hubbard-Anderson Hamiltonian, with no spin polarisation at the electrodes, but with the Zeeman-like coupling of the centre to either a molecular or an external magnetic field.
11
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The Influence of Metastabilities on the Luminescence in the Cu(In,Ga)Se_2 Solar Cells

45%
Prządo D., Igalson M., Bacewicz R., Edoff M.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
183-189
EN
Photoluminescence and electroluminescence spectra of the absorber layer in ZnO/CdS/Cu(In,Ga)Se_2 solar cells were measured. Their dependence on temperature, excitation intensity and applied voltage were studied. Electroluminescence measurements were used to investigate light- and bias-induced metastabilities in the absorber of the cells. We showed that metastable changes of defect distributions, which produce an effect on the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se_2 material, affect also the luminescence yield. The dependence of the intensity and shape of the electroluminescence spectra on the state of the sample is observed. These results fit well into the theoretical calculations of Lany and Zunger model showing that divacancy complex (V_{Se}-V_{Cu}) is responsible for metastable changes observed in ZnO/CdS/Cu(In,Ga)Se_2-based solar cells. We conclude that during light soaking or/and forward bias the probability of nonradiative recombination is decreased.
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