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The Superconducting Transition in Boron Doped Silicon Films

100%

Kociniewski T., Débarre D., Grockowiak A., Kačmarčík J., Marcenat C., Bustarret E., Ortega L., Klein T., Prudon G., Dubois C., Gautier B., Dupuy J.

issue 5

1026-1027

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. This technique is proved to be a powerful technique to dope silicon in the alloying range 2-10 at.% where superconductivity occurs. The superconducting transitions are sharp and well defined both in resistivity and magnetic susceptibility. The variation of T_{c} on the boron concentration is in contradiction with a classical exponential dependence on superconducting parameters. Electrical measurements were performed in magnetic field on the sample with c_{B} = 8 at.% (400 laser shots) which has the highest T_{c} (0.6 K). No hysteresis was found for the transitions in magnetic field, which is characteristic of a type-II superconductor. The corresponding upper critical field was on the order of 1000 G at low temperatures, much smaller than the value previously reported. The temperature dependence of H_{c2} is very well reproduced by the linearized Gorkov equations neglecting spin effects in the very dirty limit. These measurements in magnetic field allow an estimation of the electronic mean-free path, the coherence length, and the London penetration depth within a simple two-band free electron model.

Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures

100%

Knizhny V. I., Mironov O. A., Makarovskii O. A., Braithwaite G., Mattey N. L., Parker E. H. C., Phillips P. J.

Acta Physica Polonica A

1995

vol. 88

issue 4

779-782

We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si_{1-x}/Ge_{x} system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a dc applied bias voltage (±30 V). The sample was an MBE grown modulation doped Si_{0.88}Ge_{0.12}/(001)Si structure with a carrier sheet density 2.0 × 10^{11} cm^{-2} and a 4.2 K mobility 10500 cm^{2} V^{-1} s^{-1}. We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He^{3} low temperature measurements.

Electron Localization in Sb-Doped Si/SiGe Superlattices

100%

Dietl T., Jaroszyński J., Sawicki M., Głód P., Wróbel J., Stöger G., Brunthaler G., Bauer G., Schäffler F.

Acta Physica Polonica A

1995

vol. 88

issue 4

699-702

Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D_{∥}/D_{⊥} ≈ 10^{3} the system behaves as 3D in respect of localization by disorder.

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3 Acta Physica Polonica A

1 2010

2 1995

1 Bauer G.

1 Braithwaite G.

1 Brunthaler G.

1 Bustarret E.

1 Dietl T.

1 Dubois C.

1 Dupuy J.

1 Débarre D.

1 Gautier B.

1 Grockowiak A.

1 Głód P.

1 Jaroszyński J.

1 Kačmarčík J.

1 Klein T.

1 Knizhny V. I.

1 Kociniewski T.

1 Makarovskii O. A.

1 Marcenat C.

1 Mattey N. L.

1 Mironov O. A.

1 Ortega L.

1 Parker E. H. C.

1 Phillips P. J.

1 Prudon G.

1 Sawicki M.

1 Schäffler F.

1 Stöger G.

1 Wróbel J.

Search results

The Superconducting Transition in Boron Doped Silicon Films

Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures

Electron Localization in Sb-Doped Si/SiGe Superlattices