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Spin-Wave Resonance in Magnetic Semiconductor Thin Films - Experiment

100%
Maksymowicz L., Lubecka M., Powroźnik W.
Acta Physica Polonica A
|
1991
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vol. 80
|
issue 5
653-664
EN
Magnetic properties of polycrystalline thin films of chromium chalcogenide spinels (CdCr_{2}Se_{4} lightly doped with indium and CdCr_{2x}In_{2-2x}Se_{4}) were studied. The ferromagnetic (FMR) and spin-wave resonance (SWR) techniques were used to investigate the temperature dependences of both the spin-wave stiffness constant D and the saturation magnetization M_{s}. The resonance spectra were recorded in the temperature range extending from 4.2 K to 300 K. The influence of indium concentration on M_{s}(T) and D(T) was studied. It was shown that lightly doped samples (In/Cd < 1% at.) exhibited the ferromagnetic ordering with M_{s}(T) and D(T) being the linear functions of T^{3/2} and T^{5/2}, respectively. Higher concentration of indium produced the reentrant transition and spin-glass state of magnetic ordering in CdCr_{2x}In_{2-2x}Se_{4}. The temperature dependence of M_{s} was also found from the FMR data for these two magnetic phases.
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Electrical Properties of Hydrogenated Amorphous Si_{1-x}Ge_{x} Thin Films

80%
Pisarkiewicz T., Stapiński T., Kołodziej A.
Acta Physica Polonica A
|
1991
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vol. 79
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issue 2-3
203-206
EN
Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H_{2} gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism.
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