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Optical and Electrical Measurements of Low-Temperature InAlAs

100%
Korona K., Wysmołek A., Bożek R., Kamińska M., Baranowski J., Weber E.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
825-828
EN
Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In_{0.52}Al_{0.48}As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
2
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Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures

100%
Fronc K., Grabecki G., Wróbel J., Dietl T., Gajewska M.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
449-452
EN
A series of GaInAs/InP heterostructures was grown by liquid phase epitaxy. The heterostructures were characterized by magnetotransport measurements carried out down to 1.8 K and up 10 T. The results demonstrate the existence of the high-mobility two-dimensional electron gas in the narrow-gap GaInAs as well as the presence of residual conductance through the InP buffer layer.
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Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment

100%
Szuszkiewicz W., Gębicki W., Bąk-Misiuk J., Domagała J., Leszczyński M., Hartwig J.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
1003-1007
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
4
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Recent Developments in InGaN-Based Blue Leds and Lds

100%
Nakamura S.
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vol. 95
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issue 1
153-164
EN
UV/blue/green/amber InGaN quantum-well structure light-emitting diodes with an external quantum efficiency of 7.5%, 11.2%, 11.6%, and 3.3% were developed. The localization in the InGaN well layer induced by the In composition fluctuations seems to be a key role of the high efficiency of those InGaN-based light-emitting diodes. When the electrons and holes are injected into the InGaN active layer of the light-emitting diodes, these carriers are captured by the localized energy states before they are captured by the nonradiative recombination centers caused by the large number of threading dislocations. InGaN multi-quantum-well structure laser diodes with modulation doped strained-layer superlattice cladding layers grown on the epitaxially lateral overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 hours under room temperature continuouswave operation. When the laser diode was formed on the GaN layer above the SiO$_2$ mask region without any threading dislodations, the threshold current density was as low as 2.7 kA cm^{-2}. When the laser diode was formed on the window region with the high threading dislocation density, the threshold current density was as high as 4.5 to 9 kA cm^{-2}. A leakage current due to a large number of threading dislocations caused the high threshold current density on the window region.
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