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Undulator-Like Radiation and Cooperative Phenomenon in Semiconductor Microstructure with Grating

100%

Tralle I., Zięba P.

Acta Physica Polonica A

2012

vol. 121

issue 2

522-526

In the article the cooperative N^2-effect is considered, that is the radiation whose power is ım N^2, where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested effect is the result of combining two other effects, Gunn-effect in GaAs and undulator-like radiation which can be produced by means of microstructure with grating (microundulator). It is very probable that the effect can be used for the developing of a new semiconductor-based room temperature source of the THz radiation.

Undulator-Like Radiation and N² Effects in Semiconductor Microstructures with Grating

100%

Tralle I., Zięba P.

Acta Physica Polonica A

2015

vol. 128

issue 2

228-230

In the article the cooperative N²-effects are considered, that is the radiation whose power is ım N², where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested effects are the result of combining two effects: the Gunn-effect in GaAs and undulator-like radiation, or "pumping wave" acting on the electrons and which is the result of undulator field, while the second is the backward effect of radiation which is produced by electrons moving within such microundulator. It is very probable that the effects can be used for the developing of a new semiconductor-based room temperature source of the THz-radiation.

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2 Acta Physica Polonica A

1 2015

1 2012

2 Tralle I.

2 Zięba P.

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Undulator-Like Radiation and Cooperative Phenomenon in Semiconductor Microstructure with Grating

Undulator-Like Radiation and N² Effects in Semiconductor Microstructures with Grating